Ultraviolet Wavelength-Dependent Optoelectronic Properties in Two-Dimensional NbSe2–WSe2 van der Waals Heterojunction-Based Field-Effect Transistors

2017 ◽  
Vol 9 (47) ◽  
pp. 41537-41545 ◽  
Author(s):  
Seung Bae Son ◽  
Yonghun Kim ◽  
AhRa Kim ◽  
Byungjin Cho ◽  
Woong-Ki Hong
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Optoelectronic Properties ◽  
Two Dimensional ◽  
Ultraviolet Wavelength

Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure

ACS Nano ◽  
2018 ◽  
Vol 12 (7) ◽  
pp. 6700-6705 ◽  
Author(s):  
Mengwei Si ◽  
Pai-Ying Liao ◽  
Gang Qiu ◽  
Yuqin Duan ◽  
Peide D. Ye
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure

Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain

2020 ◽  
Vol 22 (45) ◽  
pp. 26231-26240
Author(s):  
W. X. Zhang ◽  
Y. Yin ◽  
C. He
Keyword(s):  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Interlayer Coupling ◽  
Two Dimensional ◽  
Biaxial Strain ◽  
Metal Dichalcogenides ◽  
Design And Manufacture

Graphene-based van der Waals (vdW) heterostructures composed of two-dimensional transition metal dichalcogenides (TMDs) and graphene show great potential in the design and manufacture of field effect transistors.

scholarly journals Tunable optoelectronic properties of a two-dimensional graphene/α-In2Se3/graphene-based ferroelectric semiconductor field-effect transistor

2021 ◽  
Author(s):  
Abdelkader Abderrahmane ◽  
Changlim Woo ◽  
Pil Ju Ko
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Ferroelectric Properties ◽  
Transfer Characteristic ◽  
Optoelectronic Properties ◽  
Two Dimensional ◽  
Physical Mechanisms ◽  
Large Hysteresis ◽  
Effect Transistor

Abstract Two-dimensional (2D) materials are promising for future electronic and optoelectronic devices. In particular, 2D material-based photodetectors have been widely studied because of their excellent photodetection performance. Owing to its excellent electrical and optical characteristics, 2D indium selenide (α-In2Se3) is a good candidate for photodetection applications. In addition, α-In2Se3 samples, including atom-thick α-In2Se3 layers, present ferroelectric properties. Herein, we report the fabrication and electrical and optoelectronic properties of multilayered graphene (Gr)/α-In2Se3/Gr-based ferroelectric semiconductor field-effect transistors (FeS-FETs). Furthermore, we discuss the physical mechanisms affecting electronic and optoelectronic transport in the Gr/α-In2Se3/Gr heterostructure. Large hysteresis was observed in the transfer characteristic curves and it was attributed to the ferroelectric polarization of MTL α-In2Se3 and carrier trapping–detrapping effects. The optoelectronic performance of the fabricated FeS-FETs depended on the ferroelectric properties of α-In2Se3 and can be easily tuned to achieve the maximum photoresponsivity and specific detectivity of 10 AW-1 and 4.4 × 1012 cmHz1/2W-1, respectively.

Spin tunnel field-effect transistors based on two-dimensional van der Waals heterostructures

2019 ◽  
Vol 2 (4) ◽  
pp. 159-163 ◽  
Author(s):  
Shengwei Jiang ◽  
Lizhong Li ◽  
Zefang Wang ◽  
Jie Shan ◽  
Kin Fai Mak
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

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