scholarly journals Surface/Interface Carrier-Transport Modulation for Constructing Photon-Alternative Ultraviolet Detectors Based on Self-Bending-Assembled ZnO Nanowires

2017 ◽  
Vol 9 (36) ◽  
pp. 31042-31053 ◽  
Author(s):  
Zhen Guo ◽  
Lianqun Zhou ◽  
Yuguo Tang ◽  
Lin Li ◽  
Zhiqi Zhang ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Zno Nanowires ◽  
Ultraviolet Detectors ◽  
Transport Modulation

scholarly journals Minority carrier transport in p-ZnO nanowires

2011 ◽  
Vol 109 (1) ◽  
pp. 016107 ◽  
Author(s):  
Y. Lin ◽  
M. Shatkhin ◽  
E. Flitsiyan ◽  
L. Chernyak ◽  
Z. Dashevsky ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Zno Nanowires

Rectifying Source and Drain Contacts for Effective Carrier Transport Modulation of Extremely Doped SiC Nanowire FETs

2011 ◽  
Vol 10 (5) ◽  
pp. 980-984 ◽  
Author(s):  
Konstantinos Rogdakis ◽  
Edwige Bano ◽  
Laurent Montes ◽  
Mikhael Bechelany ◽  
David Cornu ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Transport Modulation ◽  
Effective Carrier

scholarly journals Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires

2011 ◽  
Vol 110 (5) ◽  
pp. 056108
Author(s):  
C. Schwarz ◽  
E. Flitsiyan ◽  
L. Chernyak ◽  
V. Casian ◽  
R. Schneck ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Forward Bias ◽  
Zno Nanowires ◽  
P Type

scholarly journals Photoluminescence of ZnO Nanowires: A Review

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 857 ◽  
Author(s):  
Andres Galdámez-Martinez ◽  
Guillermo Santana ◽  
Frank Güell ◽  
Paulina R. Martínez-Alanis ◽  
Ateet Dutt
Keyword(s):  
Carrier Transport ◽  
Spatial Information ◽  
Deep Level ◽  
Ultra Violet ◽  
Zno Nanowires ◽  
Deep Level Emission ◽  
Near Band Edge ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Different Origins

One-dimensional ZnO nanostructures (nanowires/nanorods) are attractive materials for applications such as gas sensors, biosensors, solar cells, and photocatalysts. This is due to the relatively easy production process of these kinds of nanostructures with excellent charge carrier transport properties and high crystalline quality. In this work, we review the photoluminescence (PL) properties of single and collective ZnO nanowires and nanorods. As different growth techniques were obtained for the presented samples, a brief review of two popular growth methods, vapor-liquid-solid (VLS) and hydrothermal, is shown. Then, a discussion of the emission process and characteristics of the near-band edge excitonic emission (NBE) and deep-level emission (DLE) bands is presented. Their respective contribution to the total emission of the nanostructure is discussed using the spatial information distribution obtained by scanning transmission electron microscopy−cathodoluminescence (STEM-CL) measurements. Also, the influence of surface effects on the photoluminescence of ZnO nanowires, as well as the temperature dependence, is briefly discussed for both ultraviolet and visible emissions. Finally, we present a discussion of the size reduction effects of the two main photoluminescent bands of ZnO. For a wide emission (near ultra-violet and visible), which has sometimes been attributed to different origins, we present a summary of the different native point defects or trap centers in ZnO as a cause for the different deep-level emission bands.

Enhanced Carrier Transport Distance in Colloidal PbS Quantum-Dot-Based Solar Cells Using ZnO Nanowires

2015 ◽  
Vol 119 (49) ◽  
pp. 27265-27274 ◽  
Author(s):  
Haibin Wang ◽  
Victoria Gonzalez-Pedro ◽  
Takaya Kubo ◽  
Francisco Fabregat-Santiago ◽  
Juan Bisquert ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Carrier Transport ◽  
Zno Nanowires ◽  
Transport Distance ◽  
Pbs Quantum Dot

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

Carrier Transport in 2-D Materials: an Ab Initio Study

2019 ◽  
Author(s):  
Mathieu Luisier ◽  
Aron Szabo ◽  
Cedric Klinkert ◽  
Christian Stieger ◽  
Martin Rau ◽  
...  
Keyword(s):  
Ab Initio ◽  
Carrier Transport ◽  
Ab Initio Study
Sign in / Sign up

Export Citation Format

Share Document