On the Origin of Zero Interface Resistance in the Li6.25Al0.25La3Zr2O12|Li0 System: An Atomistic Investigation

2021 ◽  
Author(s):  
Lisette Haarmann ◽  
Jochen Rohrer ◽  
Karsten Albe
Keyword(s):  
Interface Resistance

Incoherent spin current

2017 ◽  
Author(s):  
K. Ando ◽  
E. Saitoh
Keyword(s):  
Diffusion Equation ◽  
Spin Density ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Spin Current ◽  
Ferromagnetic Semiconductor ◽  
Electrochemical Potential ◽  
Semiconductor Interface ◽  
Interface Resistance ◽  
Inhomogeneous Spin

This chapter introduces the concept of incoherent spin current. A diffusive spin current can be driven by spatial inhomogeneous spin density. Such spin flow is formulated using the spin diffusion equation with spin-dependent electrochemical potential. The chapter also proposes a solution to the problem known as the conductivity mismatch problem of spin injection into a semiconductor. A way to overcome the problem is by using a ferromagnetic semiconductor as a spin source; another is to insert a spin-dependent interface resistance at a metal–semiconductor interface.

Measurement of Composite Resistivity and Interface Resistance using Multi-probe System

2021 ◽  
Vol 1 (1) ◽  
pp. 30-34
Author(s):  
Seong-wook Heo ◽  
Hye-ju Shin ◽  
Sinho Choi ◽  
Tae-Hee Kim
Keyword(s):  
Interface Resistance ◽  
Probe System

Characterization of a Liquid-Metal Micro Droplets Thermal Interface Material

2010 ◽  
Author(s):  
Amer M. Hamdan ◽  
Aric R. McLanahan ◽  
Robert F. Richards ◽  
Cecilia D. Richards
Keyword(s):  
Liquid Metal ◽  
Thermal Resistance ◽  
Contact Resistance ◽  
Applied Load ◽  
Thermal Interface Material ◽  
Thermal Interface ◽  
Interface Resistance ◽  
Thermal Interface Resistance ◽  
Droplet Array

This work presents the characterization of a thermal interface material consisting of an array of mercury micro droplets deposited on a silicon die. Three arrays were tested, a 40 × 40 array (1600 grid) and two 20 × 20 arrays (400 grid). All arrays were assembled on a 4 × 4 mm2 silicon die. An experimental facility which measures the thermal resistance across the mercury array under steady state conditions is described. The thermal interface resistance of the arrays was characterized as a function of the applied load. A thermal interface resistance as low as 0.253 mm2 K W−1 was measured. A model to predict the thermal resistance of a liquid-metal micro droplet array was developed and compared to the experimental results. The model predicts the deformation of the droplet array under an applied load and then the geometry of the deformed droplets is used to predict the thermal resistance of the array. The contact resistance of the mercury arrays was estimated based on the experimental and model data. An average contact resistance was estimated to be 0.14 mm2 K W−1.

scholarly journals Interface resistance in copper coated carbon determined by frequency dependent photothermal radiometry

2010 ◽  
Vol 214 ◽  
pp. 012053 ◽  
Author(s):  
P Kijamnajsuk ◽  
F Giuliani ◽  
M Chirtoc ◽  
N Horny ◽  
J Gibkes ◽  
...  
Keyword(s):  
Photothermal Radiometry ◽  
Frequency Dependent ◽  
Interface Resistance ◽  
Coated Carbon

Interface Resistance of an SOFC Cathode with a Pr 1-X Tb x O 2-D Active Layer

2021 ◽  
Vol MA2021-03 (1) ◽  
pp. 142-142
Author(s):  
Reiichi Chiba ◽  
Kazuma Horie ◽  
Rin Kawaguchi
Keyword(s):  
Active Layer ◽  
Sofc Cathode ◽  
Interface Resistance

scholarly journals Thermal conductance between water and nm-thick WS2: extremely localized probing using nanosecond energy transport state-resolved Raman

2020 ◽  
Vol 2 (12) ◽  
pp. 5821-5832
Author(s):  
Hamidreza Zobeiri ◽  
Nicholas Hunter ◽  
Ridong Wang ◽  
Xinman Liu ◽  
Hong Tan ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Energy Transport ◽  
Thermal Conductance ◽  
Interface Resistance ◽  
Effect Of Water ◽  
Interfacial Thermal Conductance

Interfacial thermal conductance between a nm-thick suspended WS2 film and water is measured using a novel nET-Raman technique. By significantly reducing the effect of water thermal resistance, the interface resistance effect become more preeminent.

Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon

2012 ◽  
Vol 100 (25) ◽  
pp. 252404 ◽  
Author(s):  
M. Ishikawa ◽  
H. Sugiyama ◽  
T. Inokuchi ◽  
K. Hamaya ◽  
Y. Saito
Keyword(s):  
Spin Accumulation ◽  
Interface Resistance
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