Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon

2012 ◽  
Vol 100 (25) ◽  
pp. 252404 ◽  
Author(s):  
M. Ishikawa ◽  
H. Sugiyama ◽  
T. Inokuchi ◽  
K. Hamaya ◽  
Y. Saito
Keyword(s):  
Spin Accumulation ◽  
Interface Resistance

Incoherent spin current

2017 ◽  
Author(s):  
K. Ando ◽  
E. Saitoh
Keyword(s):  
Diffusion Equation ◽  
Spin Density ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Spin Current ◽  
Ferromagnetic Semiconductor ◽  
Electrochemical Potential ◽  
Semiconductor Interface ◽  
Interface Resistance ◽  
Inhomogeneous Spin

This chapter introduces the concept of incoherent spin current. A diffusive spin current can be driven by spatial inhomogeneous spin density. Such spin flow is formulated using the spin diffusion equation with spin-dependent electrochemical potential. The chapter also proposes a solution to the problem known as the conductivity mismatch problem of spin injection into a semiconductor. A way to overcome the problem is by using a ferromagnetic semiconductor as a spin source; another is to insert a spin-dependent interface resistance at a metal–semiconductor interface.

scholarly journals Direct observation of spin accumulation in Cu induced by spin pumping

2020 ◽  
Vol 2 (1) ◽  
Author(s):  
Junjia Ding ◽  
Wei Zhang ◽  
M. Benjamin Jungfleisch ◽  
John E. Pearson ◽  
Hendrik Ohldag ◽  
...  
Keyword(s):  
Direct Observation ◽  
Spin Accumulation ◽  
Spin Pumping

scholarly journals Effective Hamiltonian for silicene under arbitrary strain from multi-orbital basis

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Zhuo Bin Siu ◽  
Mansoor B. A. Jalil
Keyword(s):  
Tight Binding ◽  
Spin Torque ◽  
Spin Accumulation ◽  
Effective Hamiltonian ◽  
Fermi Surfaces ◽  
Orbital Basis ◽  
Lattice Symmetry ◽  
Out Of Plane ◽  
Coupling Parameters ◽  
Spin Orbit Interactions

AbstractA tight-binding (TB) Hamiltonian is derived for strained silicene from a multi-orbital basis. The derivation is based on the Slater–Koster coupling parameters between different orbitals across the silicene lattice and takes into account arbitrary distortion of the lattice under strain, as well as the first and second-order spin–orbit interactions (SOI). The breaking of the lattice symmetry reveals additional SOI terms which were previously neglected. As an exemplary application, we apply the linearized low-energy TB Hamiltonian to model the current-induced spin accumulation in strained silicene coupled to an in-plane magnetization. The interplay between symmetry-breaking and the additional SOI terms induces an out-of-plane spin accumulation. This spin accumulation remains unbalanced after summing over the Fermi surfaces of the occupied bands and the two valleys, and can thus be utilized for spin torque switching.

Spin accumulation, spin currents, and torque, in the problem of motion of a sharp domain wall in magnetic nanowires

2006 ◽  
Vol 243 (1) ◽  
pp. 193-196
Author(s):  
V. R. Vieira ◽  
V. K. Dugaev ◽  
P. D. Sacramento ◽  
J. Barnaś ◽  
M. A. N. Araújo ◽  
...  
Keyword(s):  
Domain Wall ◽  
Spin Accumulation ◽  
Magnetic Nanowires ◽  
Spin Currents

Effect of probe configuration on spin accumulation in lateral spin-valve structure

2005 ◽  
Vol 286 ◽  
pp. 88-90 ◽  
Author(s):  
T. Kimura ◽  
J. Hamrle ◽  
Y. Otani ◽  
K. Tsukagoshi ◽  
Y. Aoyagi
Keyword(s):  
Spin Valve ◽  
Spin Accumulation ◽  
Valve Structure

scholarly journals Crossover from Spin Accumulation into Interface States to Spin Injection in the Germanium Conduction Band

2012 ◽  
Vol 109 (10) ◽  
Author(s):  
A. Jain ◽  
J.-C. Rojas-Sanchez ◽  
M. Cubukcu ◽  
J. Peiro ◽  
J. C. Le Breton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Spin Injection ◽  
Interface States ◽  
Spin Accumulation

Effect of intervening ferromagnet on spin accumulation in Py/Au/Py spin valve device

2006 ◽  
Author(s):  
Janghae Ku ◽  
Joonyeon Chang ◽  
Jonghwa Eom ◽  
Suk- Hee Han ◽  
Gyutae Kim
Keyword(s):  
Spin Valve ◽  
Spin Accumulation

Dynamic detection of spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance (Conference Presentation)

2016 ◽  
Author(s):  
Paul A. Crowell ◽  
Changjiang Liu ◽  
Sahil Patel ◽  
Tim Peterson ◽  
Chad C. Geppert ◽  
...  
Keyword(s):  
Ferromagnetic Resonance ◽  
Semiconductor Devices ◽  
Spin Accumulation ◽  
Dynamic Detection
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