Polarity Control and Weak Fermi-Level Pinning in PdSe2 Transistors

2021 ◽  
Author(s):  
Jae Eun Seo ◽  
Tanmoy Das ◽  
Eunpyo Park ◽  
Dongwook Seo ◽  
Joon Young Kwak ◽  
...  
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

2021 ◽  
pp. 2001212
Author(s):  
Tien Dat Ngo ◽  
Zheng Yang ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Inyong Moon ◽  
...  
Keyword(s):  
Fermi Level ◽  
High Performance ◽  
Van Der Waals ◽  
Cmos Inverter ◽  
Fermi Level Pinning

scholarly journals Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

2017 ◽  
Vol 9 (22) ◽  
pp. 19278-19286 ◽  
Author(s):  
Pantelis Bampoulis ◽  
Rik van Bremen ◽  
Qirong Yao ◽  
Bene Poelsema ◽  
Harold J. W. Zandvliet ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge Transport ◽  
Metal Contacts ◽  
Fermi Level Pinning

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

Different Fermi-level pinning positions between epitaxial and rotational Al/Si interfaces

1994 ◽  
Vol 50 (7) ◽  
pp. 4893-4896 ◽  
Author(s):  
Y. Miura ◽  
S. Fujieda ◽  
K. Hirose
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning

Dimensionality-Reduced Fermi Level Pinning in Coplanar 2D Heterojunctions

2021 ◽  
pp. 4299-4305
Author(s):  
Henry Yu ◽  
Sunny Gupta ◽  
Alex Kutana ◽  
Boris I. Yakobson
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

2022 ◽  
Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Edge Contact ◽  
Fermi Level Pinning ◽  
P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

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