Two-Step Chemical Vapor Deposition-Synthesized Lead-Free All-Inorganic Cs3Sb2Br9 Perovskite Microplates for Optoelectronic Applications

Author(s):  
Sujit Kumer Shil ◽  
Fei Wang ◽  
Kingsley O. Egbo ◽  
Zhengxun Lai ◽  
Ying Wang ◽  
...  
2021 ◽  
pp. 2100192
Author(s):  
Van‐Hoang Vuong ◽  
S. V. N. Pammi ◽  
Kedhareswara Sairam Pasupuleti ◽  
Weiguang Hu ◽  
Van Dang Tran ◽  
...  

2005 ◽  
Vol 87 (10) ◽  
pp. 102903 ◽  
Author(s):  
S. Y. Yang ◽  
F. Zavaliche ◽  
L. Mohaddes-Ardabili ◽  
V. Vaithyanathan ◽  
D. G. Schlom ◽  
...  

Author(s):  
M.G. Burke ◽  
R.M. Young ◽  
C.B. Freidhoff ◽  
W.D. Partlow ◽  
H. Buhay

Amorphous refractory materials can be used in a number of optoelectronic applications when fabricated in multilayer structures. When the layers are deposited with very small thicknesses, heterostructures are produced. Such structures have an adjustable optical bandgap because the wavelength of light is much larger than the distance over which the composition of the film varies (layer to layer). Thicker multilayer structures can be fabricated on metallized, high thermal conductivity substrates. The purpose of the structure is to both protect and modify the substrate's properties. Two types of plasma-assisted chemical vapor deposition (PACVD) techniques have been employed to produce these structures.


2006 ◽  
Vol 6 (11) ◽  
pp. 3479-3482
Author(s):  
Bok-Hee Kim ◽  
Sang-Hee Kim ◽  
Jong-Hwan Kim ◽  
Kun-Jae Lee ◽  
Yong-Ho Choa ◽  
...  

This study aims to synthesize lead-free ferroelectric material, (Bi1/2Na1/2)TiO3 using the Liquid Sprayed Mist Chemical Vapor Deposition (LSMCVD) technique. The mist of precursor solution was vaporized and deposited on two different substrates of Si(100) and (111)Pt/TiO2/SiO2/Si(100) in an oxygen atmosphere. The deposition temperature and time were varied in the range of 400–600 °C and 30–90 min. (Bi1/2Na1/2TiO3 thin film had preferred orientations of (110). The thickness of the thin film deposited was 35–162 nm. The remnant polarization (2Pr) and the dielectric constant were 4.6–16.8 μC/cm2, 325–350, respectively.


2014 ◽  
Vol 557 ◽  
pp. 183-187 ◽  
Author(s):  
S. Wirths ◽  
D. Buca ◽  
Z. Ikonic ◽  
P. Harrison ◽  
A.T. Tiedemann ◽  
...  

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