Synthesis and Electrical Properties of (Bi1/2Na1/2)TiO3(BNT) Ferroelectric Thin Films by Liquid Sprayed Mist Chemical Vapor Deposition Technique

2006 ◽  
Vol 6 (11) ◽  
pp. 3479-3482
Author(s):  
Bok-Hee Kim ◽  
Sang-Hee Kim ◽  
Jong-Hwan Kim ◽  
Kun-Jae Lee ◽  
Yong-Ho Choa ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Precursor Solution ◽  
Ferroelectric Material ◽  
Lead Free ◽  
Deposition Technique ◽  
Vapor Deposition Technique

This study aims to synthesize lead-free ferroelectric material, (Bi1/2Na1/2)TiO3 using the Liquid Sprayed Mist Chemical Vapor Deposition (LSMCVD) technique. The mist of precursor solution was vaporized and deposited on two different substrates of Si(100) and (111)Pt/TiO2/SiO2/Si(100) in an oxygen atmosphere. The deposition temperature and time were varied in the range of 400–600 °C and 30–90 min. (Bi1/2Na1/2TiO3 thin film had preferred orientations of (110). The thickness of the thin film deposited was 35–162 nm. The remnant polarization (2Pr) and the dielectric constant were 4.6–16.8 μC/cm2, 325–350, respectively.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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