Low-Temperature Tunneling Electroresistance in Ferromagnetic Metal/Ferroelectric/Semiconductor Tunnel Junctions

2021 ◽  
Author(s):  
Liming Chen ◽  
Jian Zhou ◽  
Xiao Zhang ◽  
Kuankuan Ding ◽  
Jianxiang Ding ◽  
...  
Keyword(s):  
Low Temperature ◽  
Tunnel Junctions ◽  
Ferromagnetic Metal

Low-temperature magnetic characterization of optimum and etch-damaged in-plane magnetic tunnel junctions

2013 ◽  
Vol 114 (11) ◽  
pp. 114506 ◽  
Author(s):  
Jimmy J. Kan ◽  
Kangho Lee ◽  
Matthias Gottwald ◽  
Seung H. Kang ◽  
Eric E. Fullerton
Keyword(s):  
Low Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Characterization

Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions

2002 ◽  
Vol 81 (14) ◽  
pp. 2563-2565 ◽  
Author(s):  
Yutaka Oyama ◽  
Takeo Ohno ◽  
Kenji Tezuka ◽  
Ken Suto ◽  
Jun-ichi Nishizawa
Keyword(s):  
Low Temperature ◽  
Tunnel Junctions ◽  
Temperature Area

Band and Percolation Approaches to Low Temperature Properties of Manganites

1998 ◽  
Vol 12 (29n31) ◽  
pp. 3349-3354
Author(s):  
Lev P. Gor'kov ◽  
Vladimir Z. Kresin
Keyword(s):  
Low Temperature ◽  
Parent Compound ◽  
Ferromagnetic Metal ◽  
Teller Effect ◽  
Antiferromagnetic Ordering ◽  
Ferromagnetic Layers ◽  
Band Insulator ◽  
Jahn Teller ◽  
Jahn Teller Effect

Properties of the parent compound, LaMnO3 are greatly affected by strong Hund's coupling. Assuming the antiferromagnetic ordering (with a low Neel temperture) along one of the cubic axes, this coupling would result in formation of disconnected ferromagnetic layers. Furthermore, in the presence of the cooperative Jahn–Teller effect the compound becomes a band insulator. At small doping ( La 1-x Ca x MnO 3, x ≪ 1) the band insulator phase coexists with the presence of localized holes. An insulator-ferromagnetic metal transition occurs at the percolation point x c =0.16.

Local spectroscopy of a ferromagnetic metal in contact with a superconductor at very low temperature

2004 ◽  
Vol 404 (1-4) ◽  
pp. 110-113 ◽  
Author(s):  
Laurent Crétinon ◽  
Anjan K. Gupta ◽  
Bernard Pannetier ◽  
Hervé Courtois ◽  
Hermann Sellier ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ferromagnetic Metal ◽  
Very Low Temperature

Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method

2005 ◽  
Vol 275 (1-2) ◽  
pp. e1085-e1089 ◽  
Author(s):  
Yutaka Oyama ◽  
Takeo Ohno ◽  
Ken Suto ◽  
Jun-ichi Nishizawa
Keyword(s):  
Low Temperature ◽  
Tunnel Junctions ◽  
Growth Method ◽  
Temperature Area

Anomalous Behavior in Spin Dependent Tunnel Junctions

1997 ◽  
Vol 475 ◽  
Author(s):  
C. L. Platt ◽  
B. Dieny ◽  
A.E. Berkowitz
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Barrier Layer ◽  
Tunnel Junction ◽  
Applied Magnetic Field ◽  
Low Temperatures ◽  
Tunnel Junctions ◽  
Anomalous Behavior ◽  
Field Transition

ABSTRACTSpin dependent tunneling has been investigated in tunnel junctions composed of a variety of materials. The best results thus far have been with either HfO2 or MgO as the barrier layer using CoFe, Fe, or Co as the magnetic electrodes. The maximum magnetoresistive (MR) response of these junctions has been at low temperatures on the order of 30% in HfO2 and 20% in MgO. We have also observed a variety of anomalous behavior in some of our tunnel junctions at low temperature. These include MR effects dependent on the angle of orientation of the tunnel junction in the applied magnetic field, transition fields greater than lOkOe, and negative MR effects on the order of 2%.

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