High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach

2020 ◽  
Vol 12 (47) ◽  
pp. 52937-52951
Author(s):  
Hyun Ji Yang ◽  
Hyeon Joo Seul ◽  
Min Jae Kim ◽  
Yerin Kim ◽  
Hyun Cheol Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gallium Oxide ◽  
High Performance ◽  
Atomic Layer ◽  
Combinatorial Approach ◽  
Indium Gallium

Inkjet printing of homogeneous and green cellulose nanofibril dielectrics for high performance IGZO TFTs

2020 ◽  
Vol 8 (36) ◽  
pp. 12578-12586 ◽  
Author(s):  
Shangxiong Zhou ◽  
Jianhua Zhang ◽  
Xiaoping Guo ◽  
Honglong Ning ◽  
Dong Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Inkjet Printing ◽  
Thin Film Transistors ◽  
High Performance ◽  
Environmentally Friendly ◽  
Indium Gallium Zinc Oxide ◽  
Cellulose Nanofibril ◽  
Functional Nanomaterials ◽  
Indium Gallium

Inkjet printing of environmentally friendly functional nanomaterials for high performance indium–gallium–zinc oxide (IGZO) thin film transistors (TFTs) is highly in demand for the development of inexpensive and green electronics.

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