Intense Pulsed Light Annealing Process of Indium–Gallium–Zinc–Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors

2019 ◽  
Vol 11 (14) ◽  
pp. 13380-13388 ◽  
Author(s):  
Chang-Jin Moon ◽  
Hak-Sung Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Near Infrared ◽  
Annealing Process ◽  
Indium Gallium Zinc Oxide ◽  
Oxide Semiconductors ◽  
Infrared Drying ◽  
Indium Gallium ◽  
Deep Uv

Inkjet printing of homogeneous and green cellulose nanofibril dielectrics for high performance IGZO TFTs

2020 ◽  
Vol 8 (36) ◽  
pp. 12578-12586 ◽  
Author(s):  
Shangxiong Zhou ◽  
Jianhua Zhang ◽  
Xiaoping Guo ◽  
Honglong Ning ◽  
Dong Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Inkjet Printing ◽  
Thin Film Transistors ◽  
High Performance ◽  
Environmentally Friendly ◽  
Indium Gallium Zinc Oxide ◽  
Cellulose Nanofibril ◽  
Functional Nanomaterials ◽  
Indium Gallium

Inkjet printing of environmentally friendly functional nanomaterials for high performance indium–gallium–zinc oxide (IGZO) thin film transistors (TFTs) is highly in demand for the development of inexpensive and green electronics.

High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

2007 ◽  
Vol 91 (11) ◽  
pp. 113505 ◽  
Author(s):  
Jae Kyeong Jeong ◽  
Jong Han Jeong ◽  
Hui Won Yang ◽  
Jin-Seong Park ◽  
Yeon-Gon Mo ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium
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