scholarly journals Low-Voltage, Dual-Gate Organic Transistors with High Sensitivity and Stability toward Electrostatic Biosensing

2020 ◽  
Vol 12 (36) ◽  
pp. 40581-40589 ◽  
Author(s):  
Mark Nikolka ◽  
Dimitrios Simatos ◽  
Amir Foudeh ◽  
Raphael Pfattner ◽  
Iain McCulloch ◽  
...  
2019 ◽  
Vol 5 (6) ◽  
pp. 1900067 ◽  
Author(s):  
Katherina Haase ◽  
Jakob Zessin ◽  
Konstantinos Zoumboulis ◽  
Markus Müller ◽  
Mike Hambsch ◽  
...  

2018 ◽  
Vol 5 (2) ◽  
pp. 1800453 ◽  
Author(s):  
Ulrike Kraft ◽  
Tarek Zaki ◽  
Florian Letzkus ◽  
Joachim N. Burghartz ◽  
Edwin Weber ◽  
...  

Author(s):  
Yoshiteru Amemiya ◽  
Tomoya Taniguchi ◽  
Takeshi Ikeda ◽  
Masataka Fukuyama ◽  
Akio Kuroda ◽  
...  

2017 ◽  
Vol 9 (44) ◽  
pp. 38687-38694 ◽  
Author(s):  
Yu Zhang ◽  
Jun Li ◽  
Rui Li ◽  
Dan-Tiberiu Sbircea ◽  
Alexander Giovannitti ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (14) ◽  
pp. 8093-8096
Author(s):  
Wei Dou ◽  
Yuanyuan Tan

Dual gate (DG) low-voltage transparent electric-double-layer (EDL) thin-film transistors (TFTs) with microporous-SiO2 for both top and bottom dielectrics have been fabricated, both dielectrics were deposited by plasma-enhanced chemical vapor deposition (PECVD).


2016 ◽  
Vol 27 (16) ◽  
pp. 165502 ◽  
Author(s):  
I Zeimpekis ◽  
K Sun ◽  
C Hu ◽  
N M J Ditshego ◽  
O Thomas ◽  
...  

MRS Bulletin ◽  
2009 ◽  
Vol 34 (9) ◽  
pp. 658-664 ◽  
Author(s):  
P. Muralt ◽  
R. G. Polcawich ◽  
S. Trolier-McKinstry

AbstractPiezoelectric microelectromechanical systems (MEMS) offer the opportunity for high-sensitivity sensors and large displacement, low-voltage actuators. In particular, recent advances in the deposition of perovskite thin films point to a generation of MEMS devices capable of large displacements at complementary metal oxide semiconductor-compatible voltage levels. Moreover, if the devices are mounted in mechanically noisy environments, they also can be used for energy harvesting. Key to all of these applications is the ability to obtain high piezoelectric coefficients and retain these coefficients throughout the microfabrication process. This article will review the impact of composition, orientation, and microstructure on the piezoelectric properties of perovskite thin films such as PbZr1−xTixO3 (PZT). Superior piezoelectric coefficients (e31, f of −18 C/m2) are achieved in {001}-oriented PbZr0.52Ti0.48O3 films with improved compositional homogeneity on Si substrates. The advent of such high piezoelectric responses in films opens up a wide variety of possible applications. A few examples of these, including low-voltage radio frequency MEMS switches and resonators, actuators for millimeter-scale robotics, droplet ejectors, energy scavengers for unattended sensors, and medical imaging transducers, will be discussed.


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