Liquid–Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing

2017 ◽  
Vol 9 (44) ◽  
pp. 38687-38694 ◽  
Author(s):  
Yu Zhang ◽  
Jun Li ◽  
Rui Li ◽  
Dan-Tiberiu Sbircea ◽  
Alexander Giovannitti ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Organic Transistors ◽  
Dual Gate

Analysis of electrical characteristics and electroluminescent efficiency of field induced contact-DGOLET

2022 ◽  
pp. 1-11
Author(s):  
Sandeep Kumar Ojha ◽  
Brijesh Kumar
Keyword(s):  
Threshold Voltage ◽  
Dynamic Control ◽  
Drain Current ◽  
Vital Role ◽  
Electrical Characteristics ◽  
Flexible Display ◽  
Light Emitting ◽  
Device Architecture ◽  
Dual Gate ◽  
Current Densities

This research paper discusses the significance development in field-induced contact dual-gate organic light emitting transistor (FIC-DGOLET) device architecture and characteristics. The device behaviour is analyzed and observed significant value of electroluminescent efficiency. The deep investigation of FIC-DGOLET device is discussed in this paper, where impact of varying the various parameters such as thickness of organic semiconductor (OSC) materials from the range of 400 nm to 200 nm at altered value of threshold voltage by using 2D ATLAS simulator. Its theoretical calculation influence over the dynamic control of the device characteristics such as saturated drain current (I ds ), mobility (μ), threshold voltage (V th ) as well as sub threshold swing. The FIC-DGOLET is a dual-gate transistor which also emits light by the operations of two accumulated regions, that are electrons and holes which is not completely overlapped to each other. The leakage current in DG-OLET can be reduced to the extent that 70% than single gate OLET (SG-OLET). The recombination zone mechanism of FIC-DGOLET plays a vital role in its performance, where we get comparable value of electroluminescent efficiency with reported, low value of exciton quenching and current densities. The extracted parameters of DG-OLETs are like drive current of 100A, I on/off 108, threshold voltage V th of 1.3 V at V gs of –3 V and V ds of 0 to –3 V. These extracted performance parameters are very helpful in designing of flexible display applications.

Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects

2015 ◽  
Vol 7 (41) ◽  
pp. 22775-22785 ◽  
Author(s):  
Mahdieh Aghamohammadi ◽  
Reinhold Rödel ◽  
Ute Zschieschang ◽  
Carmen Ocal ◽  
Hans Boschker ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Self Assembled Monolayers ◽  
Electronic Coupling ◽  
Organic Transistors ◽  
Assembled Monolayers ◽  
Self Assembled

Dual-Gate SiO2/P3HT/SiNx OTFT

2005 ◽  
Vol 871 ◽  
Author(s):  
Flora Li ◽  
Sarswati Koul ◽  
Yuri Vygranenko ◽  
Peyman Servati ◽  
Arokia Nathan
Keyword(s):  
Threshold Voltage ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Semiconductor Layer ◽  
Organic Thin Film ◽  
Active Matrix ◽  
Gate Structure ◽  
Active Matrix Displays ◽  
Dual Gate ◽  
Bottom Gate

AbstractThis paper reports on a new organic thin-film transistor (OTFT) based on a dual-gate configuration. This dual-gate OTFT is useful in circuit applications from the standpoint of providing control over selected device parameters for enhanced circuit reliability. Moreover, the dual-gate structure can shield parasitic effects in vertically integrated electronics, making it particularly promising for active matrix display and imaging applications. The dual-gate OTFT also lends itself as a highly functional test structure for characterization of interface integrity of the active organic and dielectric layers. In this work, the dual-gate OTFT is fabricated using regioregular poly(3-hexylthiophene) (P3HT) as the organic semiconductor layer. The bottom-gate employs silicon dioxide (SiO2) as the gate dielectric, whereas the top-gate employs a low-temperature amorphous silicon nitride (SiNx) as the passivation dielectric. The voltage on the bottom-gate has a distinct influence on the threshold voltage, subthreshold slope, on-current, and leakage current of the top-gate TFT. Similar dependence of the bottom-gate TFT characteristics on the top-gate voltage is observed. This design provides a means of characterizing the density of states of the bottom P3HT/SiO2 and top P3HT/SiNx interfaces, and conveys insight into the underlying transport mechanisms. The ability to control selected TFT parameters (e.g., threshold voltage) using the dual-gate OTFT structure is attractive for circuit integration applications in active matrix displays and imagers.

Mixed Self-Assembled Monolayer Gate Dielectrics for Continuous Threshold Voltage Control in Organic Transistors and Circuits

2010 ◽  
Vol 22 (40) ◽  
pp. 4489-4493 ◽  
Author(s):  
Ute Zschieschang ◽  
Frederik Ante ◽  
Matthias Schlörholz ◽  
Maike Schmidt ◽  
Klaus Kern ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Dielectrics ◽  
Voltage Control ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled
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