Improved Figure of Merit of Cu2SnSe3 via Band Structure Modification and Energy-Dependent Carrier Scattering

2020 ◽  
Vol 12 (17) ◽  
pp. 19693-19700 ◽  
Author(s):  
Hongwei Ming ◽  
Chen Zhu ◽  
Xiaoying Qin ◽  
Jian Zhang ◽  
Di Li ◽  
...  
Keyword(s):  
Band Structure ◽  
Figure Of Merit ◽  
Structure Modification ◽  
Carrier Scattering ◽  
Energy Dependent

The realization of a high thermoelectric figure of merit in Ge-substituted β-Zn4Sb3 through band structure modification

2012 ◽  
Vol 22 (28) ◽  
pp. 13977 ◽  
Author(s):  
Shanyu Wang ◽  
Xiaojian Tan ◽  
Gangjian Tan ◽  
Xiaoyu She ◽  
Wei Liu ◽  
...  
Keyword(s):  
Band Structure ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Structure Modification ◽  
Thermoelectric Figure

scholarly journals Analyzing transport properties of p-type Mg2Si–Mg2Sn solid solutions: optimization of thermoelectric performance and insight into the electronic band structure

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Electronic Band Structure ◽  
Thermoelectric Performance ◽  
Electronic Band ◽  
P Type ◽  
Insight Into

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.

scholarly journals Experimental investigation of the predicted band structure modification of Mg2X (X: Si, Sn) thermoelectric materials due to scandium addition

2019 ◽  
Vol 125 (22) ◽  
pp. 225103 ◽  
Author(s):  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hasbuna Kamila ◽  
Eckhard Mueller ◽  
Johannes de Boor
Keyword(s):  
Experimental Investigation ◽  
Band Structure ◽  
Thermoelectric Materials ◽  
Structure Modification

Effect of anisotropy on phononic band structure and figure of merit of pentamode metamaterials

2020 ◽  
Vol 127 (12) ◽  
pp. 124903
Author(s):  
Chengxin Cai ◽  
Rong Guo ◽  
Xuemei Wang ◽  
Fuyan Sun ◽  
Zhaohong Wang ◽  
...  
Keyword(s):  
Band Structure ◽  
Figure Of Merit

Evidence of band structure modification due to Jahn–Teller distortion in LixMn2O4by photoacoustic spectroscopy

2007 ◽  
Vol 40 (12) ◽  
pp. 3807-3810 ◽  
Author(s):  
S Thomas Lee ◽  
K Raveendranath ◽  
Rajive M Tomy ◽  
Nibu A George ◽  
S Jayalekshmi ◽  
...  
Keyword(s):  
Band Structure ◽  
Photoacoustic Spectroscopy ◽  
Structure Modification ◽  
Teller Distortion ◽  
Jahn Teller ◽  
Jahn Teller Distortion

Evidence of band structure modification of LiMn2O4 upon lithium deintercalation by photoacoustic spectroscopy

2007 ◽  
Vol 90 (16) ◽  
pp. 161912 ◽  
Author(s):  
S. Thomas Lee ◽  
K. Raveendranath ◽  
M. Rajive Tomy ◽  
M. Paulraj ◽  
S. Jayalekshmi ◽  
...  
Keyword(s):  
Band Structure ◽  
Photoacoustic Spectroscopy ◽  
Structure Modification

Band structure modification of the thermoelectric Heusler-phase TiFe2Sn via Mn substitution

2017 ◽  
Vol 19 (28) ◽  
pp. 18273-18278 ◽  
Author(s):  
Tianhua Zou ◽  
Tiantian Jia ◽  
Wenjie Xie ◽  
Yongsheng Zhang ◽  
Marc Widenmeyer ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Seebeck Coefficient ◽  
Fermi Level ◽  
Density Of States ◽  
Effective Strategy ◽  
Structure Modification ◽  
Electronic Density ◽  
Heusler Phase ◽  
Mn Substitution

Doping (or substitution)-induced modification of the electronic structure to increase the electronic density of states (eDOS) near the Fermi level is considered as an effective strategy to enhance the Seebeck coefficient, and may consequently boost the thermoelectric performance.

Optical and thermoelectric response of RhTiSb half-Heusler

2019 ◽  
Vol 33 (22) ◽  
pp. 1950247 ◽  
Author(s):  
Besbes Anissa ◽  
Djelti Radouan ◽  
Bestani Benaouda
Keyword(s):  
Refractive Index ◽  
Band Structure ◽  
Absorption Coefficient ◽  
Seebeck Coefficient ◽  
Dielectric Function ◽  
Figure Of Merit ◽  
Large Range ◽  
Ultraviolet Region ◽  
Optical Parameters ◽  
Boltzmann Transport

Structural, electronic, optical and thermoelectric response of the cubic RhTiSb compound is reported using TB-mBJ potential. The calculated results for the band structure and DOS confirm that the RhTiSb is a nonmagnetic (NM) semiconductor with an indirect bandgap of 0.71 eV. The main optical parameters such as dielectric function, absorption coefficient, refractive index and optical reflectivity were estimated for emission upto 14 eV. The RhTiSb half-Heusler exhibits a maximum absorption in the visible and ultraviolet region. By using the Boltzmann transport equations as incorporated in BoltzTraP code, the thermoelectric characteristics were calculated. The main properties which describe the aptitude of material in thermoelectric environment such as Seebeck coefficient and figure of merit were calculated. The high values of figure-of-merit (ZT [Formula: see text] 0.7) were observed in large range of temperature indicating that RhTiSb have a good thermoelectric performance.

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