Microstructure and Thermoelectric Properties of Zn1–xAgxSb Thin Films Grown by Single-Target Magnetron Sputtering

2020 ◽  
Vol 3 (3) ◽  
pp. 2055-2062 ◽  
Author(s):  
Lirong Song ◽  
Jiawei Zhang ◽  
Bo B. Iversen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Single Target

Enhanced thermoelectric properties of SnSe thin films grown by single-target magnetron sputtering

2019 ◽  
Vol 7 (30) ◽  
pp. 17981-17986 ◽  
Author(s):  
Lirong Song ◽  
Jiawei Zhang ◽  
Bo Brummerstedt Iversen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Bulk Material ◽  
Thermoelectric Performance ◽  
Single Target ◽  
Snse Thin Film

SnSe thin films were successfully grown using single-target magnetron sputtering. The SnSe thin film annealed at 700 K exhibits superior thermoelectric performance compared with previously reported SnSe films and polycrystalline SnSe bulk material.

Initial Studies on The Heteroepitaxial Growth of Thin Films of (AI/In)N on Ain-Seeded (00.1) Sapphire by Single-Target Reactive Magnetron Sputtering

1992 ◽  
Vol 263 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Magnetron Sputtering ◽  
Electrical Transport ◽  
Growth Parameters ◽  
Heteroepitaxial Growth ◽  
X Ray ◽  
X Ray Scattering ◽  
Single Target ◽  
A Cell

ABSTRACTThin films of (AI/In)N alloys have been deposited on AIN-nucleated (00.1) sapphire by reactive (pure N2 gas) magnetron sputtering and characterized by X-ray scattering, stylus profilometry, optical spectroscopy, and electrical transport measurements. Initial efforts have concentrated on producing films with compositions near Al0.31In0.69N (bandgap tailored to GaN). The alloy sputtering targets were disks fabricated by cold pressing appropriate molar mixtures of beads of 99.99% purity Al and In. The resulting thin films are composed of heteroepitaxial grains {(00.1)InNll(00.1)sapphire; (10.0)InNll(11.0)Sapphire} and their chemical composition has been deduced from the variation in the a cell constant (as measured by the X-ray precession method) to yield equilibrium film compositions near Al0.04In0.96N and Al0.25In0.75N, respectively. Preliminary results are presented on the dependence of the quality of heteroepitaxial growth and electrical and optical properties of. these AlxIn1−xN alloy films on various growth parameters: such as chemical composition; film thickness; morphology; and substrate temperature.

scholarly journals Thermoelectric Properties of Amorphous Zr-Ni-Sn Thin Films Deposited by Magnetron Sputtering

2015 ◽  
Vol 44 (6) ◽  
pp. 1957-1962 ◽  
Author(s):  
Yang Zhou ◽  
Qing Tan ◽  
Jie Zhu ◽  
Siyang Li ◽  
Chenjin Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties

In situ superconducting Y−Ba−Cu−O thin films by single-target r.f. magnetron sputtering

1991 ◽  
Vol 13 (4) ◽  
pp. 477-483
Author(s):  
A. Andreone ◽  
A. Barone ◽  
A. Di Chiara ◽  
F. Miletto Granozio ◽  
G. Peluso ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Single Target
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