In situ superconducting Y−Ba−Cu−O thin films by single-target r.f. magnetron sputtering

1991 ◽  
Vol 13 (4) ◽  
pp. 477-483
Author(s):  
A. Andreone ◽  
A. Barone ◽  
A. Di Chiara ◽  
F. Miletto Granozio ◽  
G. Peluso ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Single Target

In situ thin films of YBa2Cu3O7 prepared by single target DC-magnetron sputtering

1989 ◽  
Vol 158 (1-2) ◽  
pp. 293-297 ◽  
Author(s):  
J.-M. Triscone ◽  
M.G. Karkut ◽  
O. Brunner ◽  
L. Antognazza ◽  
M. Decroux ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Single Target

Study on preparing PLT(28) thin film and its electro-optic effect

1998 ◽  
Vol 13 (5) ◽  
pp. 1266-1270 ◽  
Author(s):  
Ai-Li Ding ◽  
Wei-Gen Luo ◽  
P. S. Qiu ◽  
J. W. Feng ◽  
R. T. Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Faraday Effect ◽  
The Other ◽  
Ceramic Powders ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Electro Optic

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.

Synthesis and properties of YBa2Cu3O7 thin films grown in situ by 90° off-axis single magnetron sputtering

1990 ◽  
Vol 171 (3-4) ◽  
pp. 354-383 ◽  
Author(s):  
C.B. Eom ◽  
J.Z. Sun ◽  
B.M. Lairson ◽  
S.K. Streiffer ◽  
A.F. Marshall ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering

Comparison Between In-situ Annealing and External Annealing For Barium Ferrite Thin Films Made by RF Magnetron Sputtering

2005 ◽  
Vol 875 ◽  
Author(s):  
A. R. Abuzir ◽  
W. J. Yeh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Saturation Magnetization ◽  
Barium Ferrite ◽  
Rf Magnetron Sputtering ◽  
Silicon Substrates ◽  
Axis Orientation ◽  
Average Value ◽  
Ferrite Thin Films

AbstractDue to their large magnetic anisotropy perpendicular to the film plane, barium ferrite thick films (BaFe12O19, or BaM) with c-axis orientation are attractive candidates for microwave applications [1,2]. Barium ferrite thin films on silicon substrates without under layer have been deposited under various conditions by RF magnetron sputtering. The structure of the as-grown films is amorphous. External annealing in air has been done at 950°C for ten minutes to crystallize the films. C-axis oriented thin films with squareness of about 0.87 and coercivity of about 3.8KOe are obtained.Thick BaM films with c-axis orientation are difficult to achieve with one single deposition. Multilayer technique looks promising to grow thick films [3]. The external annealing process is difficult to incorporate with the multilayer procedure. An in-situ annealing procedure has been developed to obtain films, which can be used as the basic component for future multilayer deposition. Barium ferrites are first magnetron sputtered on bare silicon substrates in Ar + O2 atmosphere at substrate temperature of 500-600°C, the deposition pressure was kept about 0.008 torr. After the deposition, the temperature of the substrate is immediately increased to about 860°C for ten minutes in 140 torr of argon (80%) and oxygen (20%) mixture of gas, which was introduced into the chamber without breaking the vacuum. With the in-situ process, c-axis oriented thin films of 0.88 squareness and coercivity value of about 4.3KOe are obtained.Both annealing methods seem to have the similar effect on the perpendicular squareness and coercivity at various film thicknesses. The average value of the saturation magnetization Ms obtained from the in-situ annealing using multilayer technique is higher than that of the external one. We have grown films up to 1.0 micron thickness using the multilayer technique, in which three layers of 0.3 μm thickness each are deposited until the final thickness is reached. After the deposition of each layer, it was in-situ annealed before starting the deposition of the next layer. With the multilayer technique, coercivity of about 3.5 KOe and average value of the saturation magnetization Ms of about 4.0 K Gauss is obtained.

EPITAXIAL YBa2Cu3O7 and GdBa2Cu3O7 THIN FILMS GROWN IN-SITU BY SINGLE TARGET D.C. SPUTTERING

1990 ◽  
pp. 336-343
Author(s):  
M.G. KARKUT ◽  
M. GUILLOUX-VIRY ◽  
A. PERRIN ◽  
O. PENA ◽  
J. PADIOU ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Target
Sign in / Sign up

Export Citation Format

Share Document