Effects of oxygen gas pressure on structural, electrical, and thermoelectric properties of (ZnO)3In2O3 thin films deposited by rf magnetron sputtering

2008 ◽  
Vol 103 (11) ◽  
pp. 113703 ◽  
Author(s):  
Yuki Orikasa ◽  
Naoaki Hayashi ◽  
Shigetoshi Muranaka
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Gas Pressure ◽  
Oxygen Gas

Effect of Argon Gas Pressure on Optical Properties of Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering Technique

2014 ◽  
Vol 904 ◽  
pp. 205-208
Author(s):  
J.H. Gu ◽  
Z.Y. Zhong ◽  
S.B. Chen ◽  
C.Y. Yang ◽  
J. Hou
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Rf Magnetron Sputtering ◽  
Gas Pressure ◽  
Argon Gas ◽  
Deposited Films

Zinc oxide (ZnO) thin films were deposited by radio frequency (RF) magnetron sputtering technique on glass substrates in pure argon gas. The optical transmission stectra of the films were measured by ultraviolet-visible spectrophotometer. The effects of argon gas pressure on optical properties of the deposited films were investigated. The optical band-gap of the films was evaluated in terms of the Taucs law. The results show that the argon gas pressure has slightly affected the optical band-gap of the deposited films. Furthermore, the refractive index and extinction coefficient of the films were determined by means of the optical characterization methods. Meanwhile, the dispersion behavior of the refractive index was studied by the single-oscillator model of Wemple and DiDomenico, and the physical parameters of the average oscillator strength, average oscillator wavelength, oscillator energy, the refractive index dispersion parameter and the dispersion energy were obtained.

scholarly journals Thermoelectric Properties of Zn0.98Al0.02O Thin Films Prepared by RF Magnetron Sputtering

2004 ◽  
Vol 112 (1306) ◽  
pp. 327-331 ◽  
Author(s):  
Mika UENO ◽  
Yutaka YOSHIDA ◽  
Yoshiaki TAKAI ◽  
Masataka YAMAGUCHI
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Rf Magnetron Sputtering

Orientation Characteristics with Process Parameters of PLZT(X/70/100) Thin Films Prepared by RF-Magnetron Sputtering

1997 ◽  
Vol 472 ◽  
Author(s):  
S.K. Kang ◽  
M.S. Park ◽  
D.B. Kim ◽  
K.S. No ◽  
S.H. Cho
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Surface Characterization ◽  
Rf Magnetron Sputtering ◽  
Gas Pressure ◽  
Axis Orientation ◽  
X Ray ◽  
Dominant Influence

ABSTRACTPLZT(X/70/100) thin films on MgO(100), Pt/Ti/MgO(100), and Pt/Ti/Si(100) have been prepared by RF-magnetron sputtering process from sintered target with compositions of PLZT(X/70/100), where X=5, 10, and 15, respectively. The effects of substrate temperature, substrate and gas pressure on deposited thin films were studied. Crystalline and surface characterization was analyzed using XRD, SEM, AES, and AFM. X-ray rocking curves were measured to examine the film orientation. It was observed that the gas pressure was the dominant influence on having (001) preferred orientation. As a result, the degree of c-axis orientation increased as gas pressure decreased.

As‐Grown Superconductivity of Bi‐System Thin Films Prepared by Magnetron Sputtering with Three Pb Doped Targets: (Bi 1.6 Pb0.4) 1 + a (SrCa)2 Cu3 O x, (Bi 1.6 Pb0.4) 1 (SrCa)2+c Cu3 Ox and (Bi 1.6 Pb0.4) 1 (SrCa)2Cu3+cOx (a = 0.5, b= 1,c= 1.5)

1989 ◽  
Vol 169 ◽  
Author(s):  
Ken'ichi Kuroda ◽  
Masami Tanioku ◽  
Kazuyoshi Kojima ◽  
Koichi Hamanaka
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Gas Pressure ◽  
Substrate Temperatures

AbstractSuperconducting Bi system thin films have been formed on MgO(100) substrates by RF magnetron sputtering from three Pb‐doped targets: Bi2.4 Pb0.6 Sr2 Ca2 CU3 O x ,Bi 1.6 Pb0.4 Sr3 Ca3 CU3 O x and Bi 1.6 Pb 0.4 Sr2 Ca2 CU4.5 O x. The as‐grown films formed at substrate temperatures above 600 °C showed superconductivity, though, they did not contain Pb. The film, formed at 660°C and kept at the same substrate temperature and gas pressure as the sputtering conditions for 5 h after deposition, showed a resistivity drop at 115 K and zero resistivity at 83 K. The Jc value of the film was 4x105 A/cm2 at 77 K and 3x107 A/cm 2 at 20 K.

Comparison of thermoelectric properties of flexible bismuth telluride thin films deposited via DC and RF magnetron sputtering

2019 ◽  
Vol 552 (1) ◽  
pp. 64-72
Author(s):  
Piya Jitthamapirom ◽  
Pornsiri Wanarattikan ◽  
Pilaipon Nuthongkum ◽  
Rachsak Sakdanuphab ◽  
Aparporn Sakulkalavek
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Rf Magnetron Sputtering

Structure and Optical Properties of ZnO Thin Film Preparation Using RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 377-380
Author(s):  
Shan Yu Quan ◽  
Lin Mei Yang ◽  
Cong Liu ◽  
Xu Dong Zhang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Gas Pressure ◽  
Visible Range ◽  
Zno Films ◽  
Ar Gas

The aim of this study is to obtain high-quality zinc oxide thin films by reactive radiofrequency (rf) magnetron sputtering. The thin films were prepared at constant total gas pressure, with different oxygen and argon contents. The ZnO samples were characterized by several methods. From XRD measurements it was confirmed that ZnO films are c-axis oriented, the line width and intensity are sensitive to O2/Ar gas pressure. All films exhibited excellent transmission (in excess of 70 %) in the visible range with a steep fall off in transmission at 425 nm. From the absorbance measurements the optical band-gap energy was extrapolated according the transmission spectrum. It shows that the optical band gap of the films increased from 3.233 eV to 3.288 eV with increase in the oxygen concentrations from 20 % to 70 %. Refractive indexes of the obtained thin films were carried out in this study.

THERMOELECTRIC AND MAGNETO-THERMOELECTRIC PROPERTIES OF Ga-DOPED ZnO THIN FILMS BY RF MAGNETRON SPUTTERING

2014 ◽  
Vol 21 (03) ◽  
pp. 1450033 ◽  
Author(s):  
H. LIU ◽  
L. FANG ◽  
F. WU ◽  
D. X. TIAN ◽  
W. J. LI ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Doping Content ◽  
Glass Substrates ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Ga Doping

Zn (1-x) Ga x O thin films (x = 0.01, 0.03, 0.05, 0.07 named as GZO1, GZO2, GZO3, GZO4, respectively) were deposited on glass substrates by RF magnetron sputtering. The crystal structure, electrical, thermoelectric and magneto-thermoelectric properties of GZO films were investigated. It is found that all the GZO films are polycrystalline and preferentially oriented in the c-axis. The electrical resistivity of GZO films decreased first with increasing Ga doping content before it reached a minimum at x = 0.05, and then increased with further increasing Ga doping content. The magnetic fields (B) ranging from 0 to 1.5 T are perpendicularly applied to the films to study the magneto-thermoelectric properties. It is observed that the absolute values of Seebeck coefficients (|S|) of GZO1, GZO2, GZO3 show marked variation with magnetic field and obtain the maximum value at B = 0.5 T. Whereas the |S| value of GZO4 fluctuates slightly with magnetic field and reaches its peak at B = 1.0 T. The magneto-thermoelectric properties are analyzed and we propose that this behavior is mainly attributed to the effect of magnetic field on the electron transport.

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