Enhanced Thermoelectric Performance and Electronic Transport Properties of Ag-Doped Cu2–xS0.5Se0.5

2021 ◽  
Author(s):  
Xingchen Shen ◽  
Yung-Hsiang Tung ◽  
Chun-Chuen Yang ◽  
Allen Benton ◽  
Chenxiao Lin ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Thermoelectric Performance ◽  
Electronic Transport Properties

Promising thermoelectric performance in n-type AgBiSe2: effect of aliovalent anion doping

2015 ◽  
Vol 3 (2) ◽  
pp. 648-655 ◽  
Author(s):  
Satya N. Guin ◽  
Velaga Srihari ◽  
Kanishka Biswas
Keyword(s):  
Transport Properties ◽  
Thermoelectric Material ◽  
Electronic Transport ◽  
Thermoelectric Performance ◽  
Anion Doping ◽  
Electronic Transport Properties ◽  
Temperature Applications

Halide ion (Cl−/Br−/I−) aliovalently dopes on the Se2−sublattice and contributes one n-type carrier in AgBiSe2, which gives rise to improved electronic transport properties. A peakZT, value of ∼0.9 at ∼810 K has been achieved for the AgBiSe1.98Cl0.02sample, which makes it a promising n-type thermoelectric material for mid-temperature applications.

scholarly journals Impact of Fermi Surface Shape Engineering on Calculated Electronic Transport Properties of Bi-Sb-Te

2021 ◽  
Vol 59 (1) ◽  
pp. 54-60
Author(s):  
Sang-il Kim ◽  
Jong-Chan Lim ◽  
Heesun Yang ◽  
Hyun-Sik Kim
Keyword(s):  
Electrical Conductivity ◽  
Fermi Surface ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Effective Mass ◽  
Power Factor ◽  
Electronic Transport ◽  
Surface Shape ◽  
Thermoelectric Performance ◽  
Electronic Transport Properties

Using thermoelectric refrigerators can address climate change because they do not utilize harmful greenhouse gases as refrigerants. To compete with current vapor compression cycle refrigerators, the thermoelectric performance of materials needs to be improved. However, improving thermoelectric performance is challenging because of the trade-off relationship between the Seebeck coefficient and electrical conductivity. Here, we demonstrate that decreasing conductivity effective mass by engineering the shape of the Fermi surface pocket (non-parabolicity factor) can decouple electrical conductivity from the Seebeck coefficient. The effect of engineering the non-parabolicity factor was shown by calculating the electronic transport properties of a state-of-the-art Bi-Sb-Te ingot via two-band model with varying non-parabolicity. The power factor (the product of the Seebeck coefficient squared and electrical conductivity) was calculated to be improved because of enhanced electrical conductivity, with an approximately constant Seebeck coefficient, using a non-parabolicity factor other than unity. Engineering the non-parabolicity factor to achieve lighter conductivity effective mass can improve the electronic transport properties of thermoelectric materials because it only improves electrical conductivity without decreasing the Seebeck coefficient (which is directly proportional to the band mass of a single Fermi surface pocket and not to the conductivity effective mass). Theoretically, it is demonstrated that a thermoelectric figure-of-merit <i>zT</i> higher than 1.3 can be achieved with a Bi-Sb-Te ingot if the non-parabolicity factor is engineered to be 0.2. Engineering the non-parabolicity factor is another effective band engineering approach, similar to band convergence, to achieve an effective improvement in power factor.

Broadening the temperature range for high thermoelectric performance of bulk polycrystalline strontium titanate by controlling the electronic transport properties

2018 ◽  
Vol 6 (28) ◽  
pp. 7594-7603 ◽  
Author(s):  
Jian-Bo Li ◽  
Jun Wang ◽  
Jing-Feng Li ◽  
Yan Li ◽  
He Yang ◽  
...  
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Strontium Titanate ◽  
Thermoelectric Material ◽  
Electronic Transport ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
Electronic Transport Properties

Strontium titanate (SrTiO3) is a promising n-type thermoelectric material at high temperature.

ELECTRONIC TRANSPORT PROPERTIES OF SILICON NANOWIRE CAGE

2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Nanowire ◽  
Electronic Transport Properties

Improved thermoelectric transport properties of Ge4Se3Te through dimensionality reduction

2021 ◽  
Author(s):  
H. H. Huang ◽  
Xiaofeng Fan ◽  
Wei Tao Zheng ◽  
David J. Singh
Keyword(s):  
Dimensionality Reduction ◽  
Transport Properties ◽  
Electronic Transport ◽  
Thermoelectric Transport ◽  
Electronic Transport Properties ◽  
Thermoelectric Transport Properties

Layered semiconducting Ge4Se3Te shows unusual bonding that suggests the possibility of unusual transport that may be favorable for thermoelectrics. We investigated the electronic transport properties in relation to thermoelectricity of...

scholarly journals Effect of vacancy defects on the electronic transport properties of an Ag–ZnO–Pt sandwich structure

2021 ◽  
Vol 20 (2) ◽  
pp. 798-804
Author(s):  
G. R. Berdiyorov ◽  
F. Boltayev ◽  
G. Eshonqulov ◽  
H. Hamoudi
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Density Functional ◽  
Practical Importance ◽  
Functional Formalism ◽  
Vacancy Defects ◽  
Electronic Transport Properties ◽  
Charge Localization ◽  
Metal Insulator Metal ◽  
Current Rectification

AbstractThe effect of zinc and oxygen vacancy defects on the electronic transport properties of Ag(100)–ZnO(100)–Pt(100) sandwich structures is studied using density functional theory in combination with the nonequilibrium Green’s functional formalism. Defect-free systems show clear current rectification due to voltage dependent charge localization in the system as revealed in our transmission eigenstates analysis. Regardless of the location, oxygen vacancies result in enhanced current in the system, whereas Zn vacancy defects reduce the charge transport across the junction. The current rectification becomes less pronounced in the presence of both types of vacancy defects. Our findings can be of practical importance for developing metal-insulator-metal diodes.

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