Broadening the temperature range for high thermoelectric performance of bulk polycrystalline strontium titanate by controlling the electronic transport properties

2018 ◽  
Vol 6 (28) ◽  
pp. 7594-7603 ◽  
Author(s):  
Jian-Bo Li ◽  
Jun Wang ◽  
Jing-Feng Li ◽  
Yan Li ◽  
He Yang ◽  
...  
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Strontium Titanate ◽  
Thermoelectric Material ◽  
Electronic Transport ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
Electronic Transport Properties

Strontium titanate (SrTiO3) is a promising n-type thermoelectric material at high temperature.

Promising thermoelectric performance in n-type AgBiSe2: effect of aliovalent anion doping

2015 ◽  
Vol 3 (2) ◽  
pp. 648-655 ◽  
Author(s):  
Satya N. Guin ◽  
Velaga Srihari ◽  
Kanishka Biswas
Keyword(s):  
Transport Properties ◽  
Thermoelectric Material ◽  
Electronic Transport ◽  
Thermoelectric Performance ◽  
Anion Doping ◽  
Electronic Transport Properties ◽  
Temperature Applications

Halide ion (Cl−/Br−/I−) aliovalently dopes on the Se2−sublattice and contributes one n-type carrier in AgBiSe2, which gives rise to improved electronic transport properties. A peakZT, value of ∼0.9 at ∼810 K has been achieved for the AgBiSe1.98Cl0.02sample, which makes it a promising n-type thermoelectric material for mid-temperature applications.

scholarly journals Impact of Fermi Surface Shape Engineering on Calculated Electronic Transport Properties of Bi-Sb-Te

2021 ◽  
Vol 59 (1) ◽  
pp. 54-60
Author(s):  
Sang-il Kim ◽  
Jong-Chan Lim ◽  
Heesun Yang ◽  
Hyun-Sik Kim
Keyword(s):  
Electrical Conductivity ◽  
Fermi Surface ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Effective Mass ◽  
Power Factor ◽  
Electronic Transport ◽  
Surface Shape ◽  
Thermoelectric Performance ◽  
Electronic Transport Properties

Using thermoelectric refrigerators can address climate change because they do not utilize harmful greenhouse gases as refrigerants. To compete with current vapor compression cycle refrigerators, the thermoelectric performance of materials needs to be improved. However, improving thermoelectric performance is challenging because of the trade-off relationship between the Seebeck coefficient and electrical conductivity. Here, we demonstrate that decreasing conductivity effective mass by engineering the shape of the Fermi surface pocket (non-parabolicity factor) can decouple electrical conductivity from the Seebeck coefficient. The effect of engineering the non-parabolicity factor was shown by calculating the electronic transport properties of a state-of-the-art Bi-Sb-Te ingot via two-band model with varying non-parabolicity. The power factor (the product of the Seebeck coefficient squared and electrical conductivity) was calculated to be improved because of enhanced electrical conductivity, with an approximately constant Seebeck coefficient, using a non-parabolicity factor other than unity. Engineering the non-parabolicity factor to achieve lighter conductivity effective mass can improve the electronic transport properties of thermoelectric materials because it only improves electrical conductivity without decreasing the Seebeck coefficient (which is directly proportional to the band mass of a single Fermi surface pocket and not to the conductivity effective mass). Theoretically, it is demonstrated that a thermoelectric figure-of-merit <i>zT</i> higher than 1.3 can be achieved with a Bi-Sb-Te ingot if the non-parabolicity factor is engineered to be 0.2. Engineering the non-parabolicity factor is another effective band engineering approach, similar to band convergence, to achieve an effective improvement in power factor.

Electronic Transport Properties ofZrTiO4at High Temperature

1994 ◽  
Vol 33 (Part 1, No. 9B) ◽  
pp. 5471-5476 ◽  
Author(s):  
Shu Yamaguchi ◽  
Kiyoshi Kobayashi ◽  
Yoshiaki Iguchi ◽  
Noriaki Yamada ◽  
Terumasa Kato
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Electronic Transport ◽  
Electronic Transport Properties
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