Effect of Dislocation Arrays at Grain Boundaries on Electronic Transport Properties of Bismuth Antimony Telluride: Unified Strategy for High Thermoelectric Performance

2018 ◽  
Vol 8 (20) ◽  
pp. 1800065 ◽  
Author(s):  
Jae-Yeol Hwang ◽  
Jungwon Kim ◽  
Hyun-Sik Kim ◽  
Sang-Il Kim ◽  
Kyu Hyoung Lee ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Transport Properties ◽  
Electronic Transport ◽  
Thermoelectric Performance ◽  
Antimony Telluride ◽  
Bismuth Antimony Telluride ◽  
Electronic Transport Properties ◽  
Dislocation Arrays ◽  
Bismuth Antimony

Laser co-ablation of bismuth antimony telluride and diamond-like carbon nanocomposites for enhanced thermoelectric performance

2018 ◽  
Vol 6 (3) ◽  
pp. 982-990 ◽  
Author(s):  
Tsung-Han Chen ◽  
Po-Hung Chen ◽  
Chun-Hua Chen
Keyword(s):  
Thermoelectric Performance ◽  
Diamond Like Carbon ◽  
Antimony Telluride ◽  
Bismuth Antimony Telluride ◽  
Carbon Nanocomposites ◽  
Bismuth Antimony

A series of innovative heterogeneous nanocomposites comprising diamond-like carbon (DLC) clusters and well-aligned Bi–Sb–Te based nanoassemblies were realized for thermoelectric enhancement.

Promising thermoelectric performance in n-type AgBiSe2: effect of aliovalent anion doping

2015 ◽  
Vol 3 (2) ◽  
pp. 648-655 ◽  
Author(s):  
Satya N. Guin ◽  
Velaga Srihari ◽  
Kanishka Biswas
Keyword(s):  
Transport Properties ◽  
Thermoelectric Material ◽  
Electronic Transport ◽  
Thermoelectric Performance ◽  
Anion Doping ◽  
Electronic Transport Properties ◽  
Temperature Applications

Halide ion (Cl−/Br−/I−) aliovalently dopes on the Se2−sublattice and contributes one n-type carrier in AgBiSe2, which gives rise to improved electronic transport properties. A peakZT, value of ∼0.9 at ∼810 K has been achieved for the AgBiSe1.98Cl0.02sample, which makes it a promising n-type thermoelectric material for mid-temperature applications.

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