Tailoring the Surface of Metal Halide Perovskites to Enable the Atomic Layer Deposition of Metal Oxide Contacts

James A. Raiford; Cullen Chosy; Benjamin A. Reeves; Stacey F. Bent

doi:10.1021/acsaem.1c01886

Tailoring the Surface of Metal Halide Perovskites to Enable the Atomic Layer Deposition of Metal Oxide Contacts

ACS Applied Energy Materials ◽

10.1021/acsaem.1c01886 ◽

2021 ◽

Vol 4 (9) ◽

pp. 9871-9880

Author(s):

James A. Raiford ◽

Cullen Chosy ◽

Benjamin A. Reeves ◽

Stacey F. Bent

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Halide ◽

Layer Deposition ◽

Halide Perovskites

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Formation of Metal Oxide Particles in Atomic Layer Deposition During the Chemisorption of Metal Chlorides: A Review

Chemical Vapor Deposition ◽

10.1002/cvde.200400021 ◽

2005 ◽

Vol 11 (2) ◽

pp. 79-90 ◽

Cited By ~ 56

Author(s):

R. L. Puurunen

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Chlorides ◽

Layer Deposition ◽

Oxide Particles

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Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

Journal of Applied Physics ◽

10.1063/1.3428492 ◽

2010 ◽

Vol 107 (10) ◽

pp. 106104 ◽

Cited By ~ 43

Author(s):

D. Gregušová ◽

R. Stoklas ◽

Ch. Mizue ◽

Y. Hori ◽

J. Novák ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Trap States ◽

Semiconductor Structures ◽

Layer Deposition

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TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3559770 ◽

2011 ◽

Vol 14 (5) ◽

pp. G27 ◽

Cited By ~ 12

Author(s):

Qi Xie ◽

Jan Musschoot ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Layer Deposition

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Significant impact on cathode performance of lithium-ion batteries by precisely controlled metal oxide nanocoatings via atomic layer deposition

Journal of Power Sources ◽

10.1016/j.jpowsour.2013.08.042 ◽

2014 ◽

Vol 247 ◽

pp. 57-69 ◽

Cited By ~ 147

Author(s):

Xifei Li ◽

Jian Liu ◽

Xiangbo Meng ◽

Yongji Tang ◽

Mohammad Norouzi Banis ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Lithium Ion Batteries ◽

Lithium Ion ◽

Atomic Layer ◽

Layer Deposition

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Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Applied Physics Letters ◽

10.1063/1.3007978 ◽

2008 ◽

Vol 93 (19) ◽

pp. 193504 ◽

Cited By ~ 26

Author(s):

Rahul Suri ◽

Bongmook Lee ◽

Daniel J. Lichtenwalner ◽

Nivedita Biswas ◽

Veena Misra

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Layer Deposition

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Communication—Reduction of DC Resistance of Ni-Rich Lithium Transition Metal Oxide Cathode by Atomic Layer Deposition

Journal of The Electrochemical Society ◽

10.1149/1945-7111/abf17d ◽

2021 ◽

Vol 168 (4) ◽

pp. 040501

Author(s):

Yang Shi ◽

Yingjie Xing ◽

Kitae Kim ◽

Taehwan Yu ◽

Albert L. Lipson ◽

...

Keyword(s):

Transition Metal ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Transition Metal Oxide ◽

Atomic Layer ◽

Oxide Cathode ◽

Layer Deposition ◽

Communication Reduction ◽

Dc Resistance

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GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization

Applied Physics Letters ◽

10.1063/1.2806190 ◽

2007 ◽

Vol 91 (19) ◽

pp. 193503 ◽

Cited By ~ 41

Author(s):

D. Shahrjerdi ◽

D. I. Garcia-Gutierrez ◽

T. Akyol ◽

S. R. Bank ◽

E. Tutuc ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Fabrication And Characterization

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Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.094101 ◽

2017 ◽

Vol 56 (9) ◽

pp. 094101

Author(s):

Yu Sheng Chiu ◽

Quang Ho Luc ◽

Yueh Chin Lin ◽

Jui Chien Huang ◽

Chang Fu Dee ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

Rf Power ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Cited By ~ 5

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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Inherent substrate-dependent growth initiation and selective-area atomic layer deposition of TiO2 using “water-free” metal-halide/metal alkoxide reactants

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4938481 ◽

2016 ◽

Vol 34 (1) ◽

pp. 01A148 ◽

Cited By ~ 33

Author(s):

Sarah E. Atanasov ◽

Berç Kalanyan ◽

Gregory N. Parsons

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Halide ◽

Metal Alkoxide ◽

Selective Area ◽

Layer Deposition ◽

Growth Initiation ◽

Dependent Growth ◽

Free Metal

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