Improved Performance and Operational Stability of Solution-Processed InGaSnO (IGTO) Thin Film Transistors by the Formation of Sn–O Complexes

2021 ◽  
Author(s):  
Hyunjin Kim ◽  
Seohyun Maeng ◽  
Soobin Lee ◽  
Jaekyun Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Operational Stability ◽  
Solution Processed ◽  
Stability Of Solution ◽  
Improved Performance

Environmental and operational stability of solution-processed 6,13-bis(triisopropyl-silylethynyl) pentacene thin film transistors

2009 ◽  
Vol 10 (3) ◽  
pp. 486-490 ◽  
Author(s):  
Sung Kyu Park ◽  
Devin A. Mourey ◽  
Jeong-In Han ◽  
John E. Anthony ◽  
Thomas N. Jackson
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Operational Stability ◽  
Solution Processed ◽  
Stability Of Solution

Bias Stress Stability of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

2009 ◽  
Vol 156 (11) ◽  
pp. H808 ◽  
Author(s):  
Youngmin Jeong ◽  
Keunkyu Song ◽  
Dongjo Kim ◽  
Chang Young Koo ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Bias Stress ◽  
Stability Of Solution ◽  
Zinc Tin Oxide

scholarly journals Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress

APL Materials ◽  
2015 ◽  
Vol 3 (6) ◽  
pp. 062804 ◽  
Author(s):  
Asal Kiazadeh ◽  
Daniela Salgueiro ◽  
Rita Branquinho ◽  
Joana Pinto ◽  
Henrique L. Gomes ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Operational Stability ◽  
Gate Bias ◽  
Bias Stress ◽  
Sio2 Thin Film ◽  
Stability Of Solution ◽  
Zinc Tin Oxide ◽  
Gate Bias Stress
Sign in / Sign up

Export Citation Format

Share Document