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Layer Number-Dependent Enhanced Photoluminescence from a Quantum Dot Metamaterial Optical Resonator
ACS Applied Electronic Materials
◽
10.1021/acsaelm.0c01011
◽
2021
◽
Vol 3
(1)
◽
pp. 468-475
Author(s):
Haruka Takekuma
◽
Junfu Leng
◽
Kazutaka Tateishi
◽
Yang Xu
◽
Yinthai Chan
◽
...
Keyword(s):
Quantum Dot
◽
Optical Resonator
◽
Layer Number
◽
Enhanced Photoluminescence
Download Full-text
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References
Enhanced Photoluminescence Property for Quantum Dot-Gold Nanoparticle Hybrid
Nanoscale Research Letters
◽
10.1186/s11671-015-1067-0
◽
2015
◽
Vol 10
(1)
◽
Cited By ~ 11
Author(s):
Qianqian Huang
◽
Jing Chen
◽
Jian Zhao
◽
Jiangyong Pan
◽
Wei Lei
◽
...
Keyword(s):
Quantum Dot
◽
Gold Nanoparticle
◽
Photoluminescence Property
◽
Enhanced Photoluminescence
Download Full-text
Sol–Gel SiO2 Film Contained Au/SiO2/Quantum Dot Core/Shell/Shell Nanostructures with Plasmonic Enhanced Photoluminescence
Journal of Nanoscience and Nanotechnology
◽
10.1166/jnn.2012.6726
◽
2012
◽
Vol 12
(12)
◽
pp. 8999-9002
◽
Cited By ~ 4
Author(s):
Ping Yang
◽
Lipeng Zhang
◽
Yingzi Wang
Keyword(s):
Quantum Dot
◽
Sol Gel
◽
Sio2 Film
◽
Core Shell
◽
Enhanced Photoluminescence
◽
Shell Nanostructures
Download Full-text
Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence
Applied Physics Letters
◽
10.1063/1.4914895
◽
2015
◽
Vol 106
(10)
◽
pp. 103104
◽
Cited By ~ 15
Author(s):
Hai-Ming Ji
◽
Baolai Liang
◽
Paul J. Simmonds
◽
Bor-Chau Juang
◽
Tao Yang
◽
...
Keyword(s):
Quantum Dot
◽
Type I
◽
Type Ii
◽
Hybrid Type
◽
Enhanced Photoluminescence
◽
Gaas Quantum Dot
Download Full-text
The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number
ISLC 2012 International Semiconductor Laser Conference
◽
10.1109/islc.2012.6348369
◽
2012
◽
Cited By ~ 2
Author(s):
Kouichi Akahane
◽
Naokatsu Yamamoto
◽
Tetsuya Kawanishi
Keyword(s):
Quantum Dot
◽
Characteristic Temperature
◽
Laser Diodes
◽
Layer Number
◽
Quantum Dot Laser
◽
Strain Compensation
◽
Compensation Technique
◽
Inas Quantum Dot
Download Full-text
Enhanced Photoluminescence Intensity of Quantum Dot Films With the Sandwich Column Array Structure by Uniform Electrical Induction
IEEE Transactions on Electron Devices
◽
10.1109/ted.2021.3096924
◽
2021
◽
pp. 1-7
Author(s):
Binhai Yu
◽
Qiliang Zhao
◽
Qinhao Li
◽
Jiasheng Li
◽
Zongtao Li
Keyword(s):
Quantum Dot
◽
Photoluminescence Intensity
◽
Enhanced Photoluminescence
◽
Array Structure
◽
Electrical Induction
Download Full-text
Plasmonic resonance instigated enhanced photoluminescence in quantum dot dispersed nematic liquid crystal
Liquid Crystals
◽
10.1080/02678292.2018.1549283
◽
2018
◽
Vol 46
(8)
◽
pp. 1224-1230
◽
Cited By ~ 6
Author(s):
Aradhana Roy
◽
Kaushlendra Agrahari
◽
Atul Srivastava
◽
Rajiv Manohar
Keyword(s):
Liquid Crystal
◽
Quantum Dot
◽
Nematic Liquid Crystal
◽
Plasmonic Resonance
◽
Enhanced Photoluminescence
Download Full-text
Enhanced Photoluminescence of Gold Nanoparticle‐Quantum Dot Hybrids Confined in Hairy Polymer Nanofibers
ChemNanoMat
◽
10.1002/cnma.202100132
◽
2021
◽
Author(s):
Bhanu Nandan
◽
Sajan Singh
◽
Avinash Raulo
◽
Ajeet Singh
◽
Mona Mittal
◽
...
Keyword(s):
Quantum Dot
◽
Gold Nanoparticle
◽
Polymer Nanofibers
◽
Enhanced Photoluminescence
Download Full-text
Strategy for Synthesizing Quantum Dot-Layered Double Hydroxide Nanocomposites and Their Enhanced Photoluminescence and Photostability
Langmuir
◽
10.1021/la303812y
◽
2012
◽
Vol 29
(1)
◽
pp. 441-447
◽
Cited By ~ 26
Author(s):
Seungho Cho
◽
Sungwook Jung
◽
Sanghwa Jeong
◽
Jiwon Bang
◽
Joonhyuck Park
◽
...
Keyword(s):
Quantum Dot
◽
Layered Double Hydroxide
◽
Enhanced Photoluminescence
◽
Double Hydroxide
Download Full-text
Quantum memory node based on a semiconductor double quantum dot in a laser-controlled optical resonator
Quantum Electronics
◽
10.1070/qel16319
◽
2017
◽
Vol 47
(8)
◽
pp. 748-756
◽
Cited By ~ 1
Author(s):
A V Tsukanov
◽
I Yu Kateev
Keyword(s):
Quantum Dot
◽
Optical Resonator
◽
Quantum Memory
◽
Double Quantum
◽
Double Quantum Dot
Download Full-text
Stacking-layer-number dependence of highly stacked InAs quantum dot laser diodes fabricated using strain-compensation technique
10.1117/12.907533
◽
2012
◽
Author(s):
Kouichi Akahane
◽
Naokatsu Yamamoto
◽
Tetsuya Kawanishi
◽
Sergio Bietti
◽
Ayami Takata
◽
...
Keyword(s):
Quantum Dot
◽
Laser Diodes
◽
Layer Number
◽
Quantum Dot Laser
◽
Strain Compensation
◽
Compensation Technique
◽
Inas Quantum Dot
Download Full-text
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