The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number
1999 ◽
Vol 11
(12)
◽
pp. 1527-1529
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Keyword(s):
2001 ◽
Vol 13
(9)
◽
pp. 915-917
◽
Keyword(s):
Keyword(s):