Correlating Crack Onset Strain and Cohesive Fracture Energy in Polymer Semiconductor Films

2017 ◽  
Vol 50 (21) ◽  
pp. 8611-8618 ◽  
Author(s):  
Nrup Balar ◽  
Brendan T. O’Connor
Keyword(s):  
Fracture Energy ◽  
Semiconductor Films ◽  
Cohesive Fracture ◽  
Polymer Semiconductor

Phase behavior of polymer semiconductor films and its influence on the mobility in FET devices

2003 ◽  
Author(s):  
Christopher J. Newsome ◽  
Takeo Kawase ◽  
Tatsuya Shimoda ◽  
David J. Brennan
Keyword(s):  
Phase Behavior ◽  
Semiconductor Films ◽  
Polymer Semiconductor

Determination of Thermal Transition Depth Profiles in Polymer Semiconductor Films with Ellipsometry

2013 ◽  
Vol 46 (18) ◽  
pp. 7325-7331 ◽  
Author(s):  
Christian Müller ◽  
L. Mattias Andersson ◽  
Ovidio Peña-Rodríguez ◽  
Miquel Garriga ◽  
Olle Inganäs ◽  
...  
Keyword(s):  
Thermal Transition ◽  
Semiconductor Films ◽  
Depth Profiles ◽  
Transition Depth ◽  
Polymer Semiconductor

Effect of Oriented Platy Filler on the Fracture Mechanism of Elastomers

1988 ◽  
Vol 61 (4) ◽  
pp. 619-629 ◽  
Author(s):  
Roger J. Eldred
Keyword(s):  
Fracture Energy ◽  
Failure Modes ◽  
Fold Increase ◽  
Fracture Pattern ◽  
Shear Mode ◽  
Cohesive Fracture ◽  
Lateral Direction ◽  
Reinforcing Agent ◽  
Interlaminar Shear ◽  
Energy Absorbing

Abstract Through an investigation of tension fatigue failure modes, oriented platy fillers have been found to provide elastomers with a unique failure mechanism which allows the elastomer to resist destructive crack growth. Samples of chlorosulfonated polyethylene containing talc as a reinforcing agent failed in an interlaminar shear mode, parallel to the applied stress. This fracture pattern resulted from diversion of the classical Griffith-type crack which would normally proceed perpendicularly to the stress. The theoretical criterion for diversion requires the adhesive fracture energy, Gad, in the plane of the diverted crack to be about one-tenth of the cohesive fracture energy, Gco, in the plane of the Griffith crack. Measured values of the fracture energies determined by 180° peel (Gad) tests and trouser tear (Gco) tests showed that the talc-filled elastomer satisfied the criterion. However, the criterion was met, not by the introduction of planes of weakness in the lateral direction (thereby reducing Gad), but by a more than five-fold increase in the cohesive fracture energy over that measured for a control containing carbon black as reinforcing agent. Examination of the fractured surfaces by scanning electron microscopy showed that the increase in Gco was due to the many energy absorbing fracture paths down which the tear was diverted as it advanced through the elastomer. Besides exhibiting high tear energies, the elastomer was found to be highly insensitive to stress risers such as razor cuts. The combination of tear resistance and insensitivity to flaws leads to a prediction that elastomers containing oriented platy fillers will exhibit increased strength and durability. This first practical system affording crack diversion has special application to hoses and topologically similar shapes such as boots and sleeves.

Highly sensitive 2D organic field-effect transistors for the detection of lithium-ion battery electrolyte leakage

2021 ◽  
Vol 57 (28) ◽  
pp. 3464-3467
Author(s):  
Ben Yang ◽  
Shiqi Zhang ◽  
Yan Wang ◽  
Shilei Dai ◽  
Xin Wang ◽  
...  
Keyword(s):  
Electrolyte Leakage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Lithium Ion ◽  
Organic Polymer ◽  
Semiconductor Films ◽  
Organic Field Effect Transistors ◽  
Highly Sensitive ◽  
Polymer Semiconductor ◽  
Battery Electrolyte

A broad range of conjugated 2D organic polymer semiconductor films were prepared, and we utilized the resulting OFET devices to monitor lithium-ion batterie leakage.

Anisotropic Charge-Carrier Transport in High-Mobility Donor-Acceptor Conjugated Polymer Semiconductor Films

2016 ◽  
Vol 11 (19) ◽  
pp. 2725-2729 ◽  
Author(s):  
Zhiyuan Zhao ◽  
Hongtao Liu ◽  
Yan Zhao ◽  
Cheng Cheng ◽  
Jing Zhao ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Conjugated Polymer ◽  
Carrier Transport ◽  
High Mobility ◽  
Charge Carrier Transport ◽  
Semiconductor Films ◽  
Polymer Semiconductor ◽  
Donor Acceptor

scholarly journals Variety of Ordered Patterns in Donor–Acceptor Polymer Semiconductor Films Crystallized from Solution

2021 ◽  
Author(s):  
Shunpu Li ◽  
Jin Li ◽  
Youngtea Chun ◽  
Pawan K. Shrestha ◽  
Xin Chang ◽  
...  
Keyword(s):  
Semiconductor Films ◽  
Polymer Semiconductor ◽  
Donor Acceptor

scholarly journals The effect of porogen loading on the stiffness and fracture energy of brittle organosilicates

2009 ◽  
Vol 24 (1) ◽  
pp. 107-116 ◽  
Author(s):  
Han Li ◽  
Youbo Lin ◽  
Ting Y. Tsui ◽  
Joost J. Vlassak
Keyword(s):  
Integrated Circuits ◽  
Fracture Energy ◽  
Chemical Vapor ◽  
Signal Propagation ◽  
Deposition Process ◽  
Dielectric Materials ◽  
Cohesive Fracture ◽  
Cu Metallization ◽  
Organosilicate Glass ◽  
The Impact

Integrating porous low-permittivity dielectrics into Cu metallization is one of the strategies to reduce power consumption, signal propagation delays, and crosstalk between interconnects for the next generation of integrated circuits. The porosity and pore structure of these low-k dielectric materials, however, also affect other important material properties in addition to the dielectric constant. In this paper, we investigate the impact of porogen loading on the stiffness and cohesive fracture energy of a series of porous organosilicate glass (OSG) thin films using nanoindentation and the double-cantilever beam (DCB) technique. The OSG films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and had a porosity in the range of 7−45%. We show that the degree of porogen loading during the deposition process changes both the network structure and the porosity of the dielectric, and we resolve the contributions of both effects to the stiffness and fracture energy of the films. The experimental results for stiffness are compared with micromechanical models and finite element calculations. It is demonstrated that the stiffness of the OSG films depends sensitively on their porosity and that considerable improvements in stiffness may be obtained through further optimization of the pore microstructure. The cohesive fracture energy of the films decreases linearly with increasing porosity, consistent with a simple planar through-pore fracture mechanism.

Sign in / Sign up

Export Citation Format

Share Document