Ultrafast Dynamics of Hole Injection and Recombination in Organometal Halide Perovskite Using Nickel Oxide as p-Type Contact Electrode

2016 ◽  
Vol 7 (7) ◽  
pp. 1096-1101 ◽  
Author(s):  
Alice Corani ◽  
Ming-Hsien Li ◽  
Po-Shen Shen ◽  
Peter Chen ◽  
Tzung-Fang Guo ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Hole Injection ◽  
Ultrafast Dynamics ◽  
Type Contact ◽  
Organometal Halide Perovskite ◽  
Halide Perovskite ◽  
P Type ◽  
Contact Electrode

Boosting the Photocurrent Density of p-Type Solar Cells Based on Organometal Halide Perovskite-Sensitized Mesoporous NiO Photocathodes

2014 ◽  
Vol 6 (15) ◽  
pp. 12609-12617 ◽  
Author(s):  
Huan Wang ◽  
Xianwei Zeng ◽  
Zhanfeng Huang ◽  
Wenjun Zhang ◽  
Xianfeng Qiao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Photocurrent Density ◽  
Organometal Halide Perovskite ◽  
Halide Perovskite ◽  
P Type

Organometal halide perovskite as hole injection enhancer in organic light-emitting diode

2017 ◽  
Vol 51 ◽  
pp. 257-263 ◽  
Author(s):  
Yaomiao Feng ◽  
Jiaju Xu ◽  
Haiquan Shan ◽  
Lei Dong ◽  
Xize Sun ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Hole Injection ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Organometal Halide Perovskite ◽  
Halide Perovskite

2H → 1T′ phase transformation in Janus monolayer MoSSe and MoSTe: an efficient hole injection contact for 2H-MoS2

2018 ◽  
Vol 6 (47) ◽  
pp. 13000-13005 ◽  
Author(s):  
Zhiguo Wang
Keyword(s):  
Phase Transformation ◽  
Hole Injection ◽  
Type Contact ◽  
P Type ◽  
Phase Engineering

A p-type contact for 2H-MoS2 monolayer-based nano-devices through phase engineering.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Tailored Electronic Band Gap and Valance Band Edge of Nickel Oxide via p-Type Incorporation

2021 ◽  
Vol 125 (13) ◽  
pp. 7495-7501
Author(s):  
Gang Wang ◽  
Jinju Zheng ◽  
Boyi Xu ◽  
Chaonan Zhang ◽  
Yue Zhu ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Band Gap ◽  
Band Edge ◽  
Electronic Band ◽  
Electronic Band Gap ◽  
P Type

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

Organic solar cells employing magnetron sputtered p-type nickel oxide thin film as the anode buffer layer

2010 ◽  
Vol 94 (12) ◽  
pp. 2332-2336 ◽  
Author(s):  
Sun-Young Park ◽  
Hye-Ri Kim ◽  
Yong-Jin Kang ◽  
Dong-Ho Kim ◽  
Jae-Wook Kang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Nickel Oxide ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
Oxide Thin Film ◽  
Anode Buffer Layer ◽  
P Type ◽  
Type Nickel ◽  
Nickel Oxide Thin Film
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