Dependences of the Optical Absorption, Ground State Energy Level, and Interfacial Electron Transfer Dynamics on the Size of CdSe Quantum Dots Adsorbed on the (001), (110), and (111) Surfaces of Single Crystal Rutile TiO2

2017 ◽  
Vol 121 (45) ◽  
pp. 25390-25401 ◽  
Author(s):  
Taro Toyoda ◽  
Qing Shen ◽  
Keita Kamiyama ◽  
Kenji Katayama ◽  
Shuzi Hayase
Keyword(s):  
Quantum Dots ◽  
Electron Transfer ◽  
Energy Level ◽  
Optical Absorption ◽  
Single Crystal ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Cdse Quantum Dots ◽  
Rutile Tio2

Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS

2003 ◽  
Vol 93 (9) ◽  
pp. 5325-5330 ◽  
Author(s):  
L. W. Lu ◽  
C. L. Yang. ◽  
J. Wang ◽  
I. K. Sou ◽  
W. K. Ge
Keyword(s):  
Quantum Dots ◽  
Energy Level ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Self Organized ◽  
Electron Ground State

scholarly journals Padé approximants for the ground-state energy of closed-shell quantum dots

1997 ◽  
Vol 56 (24) ◽  
pp. 15740-15743 ◽  
Author(s):  
Augusto Gonzalez ◽  
Bart Partoens ◽  
François M. Peeters
Keyword(s):  
Quantum Dots ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Closed Shell ◽  
Padé Approximants ◽  
Pade Approximants

Effects of Confinement on Shallow Impurities in GaAs-Ga 1−xA1xAs Quantum Dots

1992 ◽  
Vol 281 ◽  
Author(s):  
Francisco A. P. Osörio ◽  
Oscar HipöLito ◽  
Francois M. Peeters
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Dot ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Perpendicular Magnetic Field ◽  
Confinement Potential ◽  
Shallow Impurity ◽  
Shallow Impurities

ABSTRACTThe ground state energy of a shallow impurity placed in the center of a circular quantum dot is studied. The effects of the strength of the confinement potential and a perpendicular magnetic field are investigated theoretically.

GROUND STATE ENERGY LEVELS OF INDIUM ARSENIDE QUANTUM DOTS CALCULATED BY A SINGLE BAND EFFECTIVE MASS MODEL USING REPRESENTATIVE STRAINED INPUT PROPERTIES

2013 ◽  
Vol 27 (16) ◽  
pp. 1350120
Author(s):  
HYUNHO SHIN ◽  
JONG-BONG KIM
Keyword(s):  
Quantum Dots ◽  
Effective Mass ◽  
Indium Arsenide ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Energy Levels ◽  
Single Band ◽  
Hamiltonian Matrix ◽  
Band Model

Representative strained values of effective mass and potential of charge carriers in indium arsenide ( InAs ) quantum dots have been used as input to the complete orthonormal set approach of an effective-mass, single-band, and constant-potential model for the calculation of the ground state energy levels. Even with the avoidance of the diagonalization of the strain Hamiltonian matrix, the single-band-model-calculated ground state energy levels are reasonably refined by the use of representative strained values of potential and effective mass.

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