Crystal Growth, Exponential Optical Absorption Edge, and Ground State Energy Level of PbS Quantum Dots Adsorbed on the (001), (110), and (111) Surfaces of Rutile-TiO2

2018 ◽  
Vol 122 (25) ◽  
pp. 13590-13599 ◽  
Author(s):  
Taro Toyoda ◽  
Qing Shen ◽  
Kanae Hori ◽  
Naoki Nakazawa ◽  
Keita Kamiyama ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Crystal Growth ◽  
Energy Level ◽  
Optical Absorption ◽  
Ground State Energy ◽  
Absorption Edge ◽  
Ground State ◽  
State Energy ◽  
Optical Absorption Edge ◽  
Pbs Quantum Dots

Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS

2003 ◽  
Vol 93 (9) ◽  
pp. 5325-5330 ◽  
Author(s):  
L. W. Lu ◽  
C. L. Yang. ◽  
J. Wang ◽  
I. K. Sou ◽  
W. K. Ge
Keyword(s):  
Quantum Dots ◽  
Energy Level ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Self Organized ◽  
Electron Ground State

scholarly journals Padé approximants for the ground-state energy of closed-shell quantum dots

1997 ◽  
Vol 56 (24) ◽  
pp. 15740-15743 ◽  
Author(s):  
Augusto Gonzalez ◽  
Bart Partoens ◽  
François M. Peeters
Keyword(s):  
Quantum Dots ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Closed Shell ◽  
Padé Approximants ◽  
Pade Approximants

Effects of Confinement on Shallow Impurities in GaAs-Ga 1−xA1xAs Quantum Dots

1992 ◽  
Vol 281 ◽  
Author(s):  
Francisco A. P. Osörio ◽  
Oscar HipöLito ◽  
Francois M. Peeters
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Dot ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Perpendicular Magnetic Field ◽  
Confinement Potential ◽  
Shallow Impurity ◽  
Shallow Impurities

ABSTRACTThe ground state energy of a shallow impurity placed in the center of a circular quantum dot is studied. The effects of the strength of the confinement potential and a perpendicular magnetic field are investigated theoretically.

GROUND STATE ENERGY LEVELS OF INDIUM ARSENIDE QUANTUM DOTS CALCULATED BY A SINGLE BAND EFFECTIVE MASS MODEL USING REPRESENTATIVE STRAINED INPUT PROPERTIES

2013 ◽  
Vol 27 (16) ◽  
pp. 1350120
Author(s):  
HYUNHO SHIN ◽  
JONG-BONG KIM
Keyword(s):  
Quantum Dots ◽  
Effective Mass ◽  
Indium Arsenide ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Energy Levels ◽  
Single Band ◽  
Hamiltonian Matrix ◽  
Band Model

Representative strained values of effective mass and potential of charge carriers in indium arsenide ( InAs ) quantum dots have been used as input to the complete orthonormal set approach of an effective-mass, single-band, and constant-potential model for the calculation of the ground state energy levels. Even with the avoidance of the diagonalization of the strain Hamiltonian matrix, the single-band-model-calculated ground state energy levels are reasonably refined by the use of representative strained values of potential and effective mass.

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