Electric Field Effects on Spin Splitting of Two-Dimensional van der Waals Arsenene/FeCl2 Heterostructures

2016 ◽  
Vol 120 (10) ◽  
pp. 5613-5618 ◽  
Author(s):  
Yan Song ◽  
Dong Li ◽  
Wenbo Mi ◽  
Xiaocha Wang ◽  
Yingchun Cheng
Keyword(s):  
Electric Field ◽  
Van Der Waals ◽  
Spin Splitting ◽  
Two Dimensional ◽  
Electric Field Effects ◽  
Field Effects

Electric field effects on the electronic and optical properties in C2N/Sb van der Waals heterostructure

Carbon ◽  
2018 ◽  
Vol 129 ◽  
pp. 738-744 ◽  
Author(s):  
Xiaolong Wang ◽  
Ruge Quhe ◽  
Wei Cui ◽  
Yusong Zhi ◽  
Yuanqi Huang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Van Der Waals ◽  
Electric Field Effects ◽  
Electronic And Optical Properties ◽  
Field Effects ◽  
Van Der Waals Heterostructure

Electric field effects in a two-dimensional Disordered Hubbard-Mott model

2002 ◽  
Vol 66 (3) ◽  
Author(s):  
J. Souza de Almeida ◽  
C. Moysés Araújo ◽  
I. Pepe ◽  
A. Ferreira da Silva
Keyword(s):  
Electric Field ◽  
Two Dimensional ◽  
Electric Field Effects ◽  
Field Effects ◽  
Mott Model

Enhanced carrier separation in ferroelectric In2Se3/MoS2 van der Waals heterostructure

2020 ◽  
Vol 8 (32) ◽  
pp. 11160-11167 ◽  
Author(s):  
Bin Zhou ◽  
Kai Jiang ◽  
Liyan Shang ◽  
Jinzhong Zhang ◽  
Yawei Li ◽  
...  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Van Der Waals ◽  
Electric Field Effects ◽  
Field Effects ◽  
Van Der Waals Heterostructure ◽  
Carrier Separation

Enhanced carrier separation in ferroelectric In2Se3/MoS2 van der Waals heterostructure and external electric field effects.

Tunable electronic properties of an Sb/InSe van der Waals heterostructure by electric field effects

2019 ◽  
Vol 21 (10) ◽  
pp. 5627-5633 ◽  
Author(s):  
Zhihui Zhang ◽  
Yan Zhang ◽  
Zifeng Xie ◽  
Xing Wei ◽  
Tingting Guo ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Mems Devices ◽  
Electric Field Effects ◽  
Direct Bandgap ◽  
Field Effects ◽  
Van Der Waals Heterostructure

An Sb/InSe heterostructure manifests a varied direct bandgap under an electric field which is more favorable to FETs and MEMS devices.

Type-II InSe/MoSe2(WSe2) van der Waals heterostructures: vertical strain and electric field effects

2018 ◽  
Vol 6 (37) ◽  
pp. 10010-10019 ◽  
Author(s):  
Xueping Li ◽  
Guangrui Jia ◽  
Juan Du ◽  
Xiaohui Song ◽  
Congxin Xia ◽  
...  
Keyword(s):  
Electric Field ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Electric Field Effects ◽  
Vertical Strain ◽  
Field Effects

InSe/MoSe2(WSe2) vdWHs with type-II alignment, effectively tuned by E-field and vertical strain, are systematically discussed for future applications in optoelectronic devices.

Temperature and electric field effects on the dynamic modes in a spin current auto-oscillator

2021 ◽  
Vol 103 (14) ◽  
Author(s):  
Lina Chen ◽  
Yaoyu Gu ◽  
Kaiyuan Zhou ◽  
Zishuang Li ◽  
Liyuan Li ◽  
...  
Keyword(s):  
Electric Field ◽  
Spin Current ◽  
Electric Field Effects ◽  
Field Effects
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