Electric field effects on electronic structure of tantalum dichalcogenides van der Waals TaS2/TaSe2 and TaSe2/TaTe2 heterostructures

2018 ◽  
Vol 455 ◽  
pp. 963-969 ◽  
Author(s):  
Xiaoping Xue ◽  
Xiaocha Wang ◽  
Wenbo Mi
Keyword(s):  
Electronic Structure ◽  
Electric Field ◽  
Van Der Waals ◽  
Electric Field Effects ◽  
Field Effects

Electric field effects on the electronic and optical properties in C2N/Sb van der Waals heterostructure

Carbon ◽  
2018 ◽  
Vol 129 ◽  
pp. 738-744 ◽  
Author(s):  
Xiaolong Wang ◽  
Ruge Quhe ◽  
Wei Cui ◽  
Yusong Zhi ◽  
Yuanqi Huang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Van Der Waals ◽  
Electric Field Effects ◽  
Electronic And Optical Properties ◽  
Field Effects ◽  
Van Der Waals Heterostructure

Biaxial strain and external electric field effects on the electronic structure of hydrogenated GaN monolayer

2019 ◽  
Vol 136 ◽  
pp. 106270 ◽  
Author(s):  
D.M. Hoat ◽  
Mosayeb Naseri ◽  
Tuan V. Vu ◽  
Hai L. Luong ◽  
Nguyen N. Hieu ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electric Field ◽  
External Electric Field ◽  
Biaxial Strain ◽  
Electric Field Effects ◽  
Field Effects

Enhanced carrier separation in ferroelectric In2Se3/MoS2 van der Waals heterostructure

2020 ◽  
Vol 8 (32) ◽  
pp. 11160-11167 ◽  
Author(s):  
Bin Zhou ◽  
Kai Jiang ◽  
Liyan Shang ◽  
Jinzhong Zhang ◽  
Yawei Li ◽  
...  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Van Der Waals ◽  
Electric Field Effects ◽  
Field Effects ◽  
Van Der Waals Heterostructure ◽  
Carrier Separation

Enhanced carrier separation in ferroelectric In2Se3/MoS2 van der Waals heterostructure and external electric field effects.

Tunable electronic properties of an Sb/InSe van der Waals heterostructure by electric field effects

2019 ◽  
Vol 21 (10) ◽  
pp. 5627-5633 ◽  
Author(s):  
Zhihui Zhang ◽  
Yan Zhang ◽  
Zifeng Xie ◽  
Xing Wei ◽  
Tingting Guo ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Mems Devices ◽  
Electric Field Effects ◽  
Direct Bandgap ◽  
Field Effects ◽  
Van Der Waals Heterostructure

An Sb/InSe heterostructure manifests a varied direct bandgap under an electric field which is more favorable to FETs and MEMS devices.

Type-II InSe/MoSe2(WSe2) van der Waals heterostructures: vertical strain and electric field effects

2018 ◽  
Vol 6 (37) ◽  
pp. 10010-10019 ◽  
Author(s):  
Xueping Li ◽  
Guangrui Jia ◽  
Juan Du ◽  
Xiaohui Song ◽  
Congxin Xia ◽  
...  
Keyword(s):  
Electric Field ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Electric Field Effects ◽  
Vertical Strain ◽  
Field Effects

InSe/MoSe2(WSe2) vdWHs with type-II alignment, effectively tuned by E-field and vertical strain, are systematically discussed for future applications in optoelectronic devices.

Study of electric field effects on the electronic structure of quantum wells by resonant Raman scattering

1988 ◽  
Vol 196 (1-3) ◽  
pp. 578-583 ◽  
Author(s):  
J.M. Calleja ◽  
C. López ◽  
C. Tejedor ◽  
L. Viña ◽  
E.E. Méndez ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electric Field ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Electric Field Effects ◽  
Field Effects ◽  
Resonant Raman ◽  
Resonant Raman Scattering
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