Photo-Cross-Linkable Organic–Inorganic Hybrid Gate Dielectric for High Performance Organic Thin Film Transistors

2016 ◽  
Vol 120 (10) ◽  
pp. 5790-5796 ◽  
Author(s):  
Kyunghun Kim ◽  
Hyun Woo Song ◽  
Kwonwoo Shin ◽  
Se Hyun Kim ◽  
Chan Eon Park
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Inorganic Hybrid

Densely cross-linked polysiloxane dielectric for organic thin-film transistors with enhanced electrical stability

2019 ◽  
Vol 7 (19) ◽  
pp. 5821-5829 ◽  
Author(s):  
Joo-Young Kim ◽  
Eun Kyung Lee ◽  
Jiyoung Jung ◽  
Don-Wook Lee ◽  
Youngjun Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Hybrid Material ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Cross Linking ◽  
Urethane Acrylate ◽  
Organic Thin Film ◽  
Electrical Stability ◽  
Inorganic Hybrid

A solution-processable organic–inorganic hybrid material composed of a polysiloxane urethane acrylate composite (PSUAC) was developed through a dual cross-linking mechanism and satisfies all the requirements for use as a gate dielectric for flexible organic thin-film transistors (OTFTs).

High performance organic thin-film transistors with photopatterned gate dielectric

2007 ◽  
Vol 90 (3) ◽  
pp. 033502 ◽  
Author(s):  
Sun Hee Lee ◽  
Dong Joon Choo ◽  
Seung Hoon Han ◽  
Jun Hee Kim ◽  
Young Rea Son ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Photo-Patternable Titanium Doped Organic–Inorganic Hybrid Gate Dielectric in Organic Thin Film Transistors

2008 ◽  
Vol 8 (9) ◽  
pp. 4679-4683 ◽  
Author(s):  
Chaun Gi Choi ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Uv Light ◽  
Sol Gel ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Inorganic Hybrid ◽  
Top Contact

Solution processable and photo-patternable titanium doped organic–inorganic hybrid material (MDT hybrimer) was prepared by simple sol–gel reaction for the gate dielectrics in organic thin film transistors (OTFTs). The MDT hybrimer is a typical nanocomposite which is fabricated via UV cross-linking of the nano-sized organo-oligosiloxanes. The photo-patternability of the MDT thin films was investigated using the UV light. The surface and electrical properties of MDT thin film were also investigated. The pentacene-based OTFT with MDT gate dielectrics was fabricated by using the top contact geometry. It is found that the OTFT with the MDT gate dielectrics showed a small hysteresis and good performance. The filed-effect mobility, threshold voltage, subthreshold slope and on/off current ratio of OTFT with MDT gate dielectric were 0.66 cm2V−1s−1, −14 V, 1.6 Vdec.−1, and 3 × 106, respectively.

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