Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors

2006 ◽  
Vol 128 (14) ◽  
pp. 4554-4555 ◽  
Author(s):  
Ping Liu ◽  
Yiliang Wu ◽  
Yuning Li ◽  
Beng S. Ong ◽  
Shiping Zhu
2010 ◽  
Vol 3 (10) ◽  
pp. 101601 ◽  
Author(s):  
Yoshinori Horii ◽  
Koichi Sakaguchi ◽  
Masayuki Chikamatsu ◽  
Reiko Azumi ◽  
Kiyoshi Yase ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (29) ◽  
pp. 14890-14895 ◽  
Author(s):  
Xurong Zhao ◽  
Sumei Wang ◽  
Aiju Li ◽  
Jun Ouyang ◽  
Guodong Xia ◽  
...  

Solution-processed high-k ZrTiOx dielectric films achieve a k value and capacitance of 53 and 467 nF cm−2, and a low leakage current of 4 × 10−8 A cm−2 with polymer modification. High-performance organic thin film transistors with a carrier mobility of 0.58 cm2 V−1 s−1, and a low operating voltage of 6 V were realized with ZrTiOx dielectric films.


2006 ◽  
Author(s):  
Tae-Woo Lee ◽  
Jung Han Shin ◽  
Joo Young Kim ◽  
Younghun Byun ◽  
Sang Yun Lee

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