scholarly journals Role of Polymer Fractionation in Energetic Losses and Charge Carrier Lifetimes of Polymer: Fullerene Solar Cells

2015 ◽  
Vol 119 (34) ◽  
pp. 19668-19673 ◽  
Author(s):  
Derya Baran ◽  
Michelle S. Vezie ◽  
Nicola Gasparini ◽  
Florent Deledalle ◽  
Jizhong Yao ◽  
...  
2013 ◽  
Vol 113 (12) ◽  
pp. 124510 ◽  
Author(s):  
C. Kraft ◽  
H. Hempel ◽  
V. Buschmann ◽  
T. Siebert ◽  
C. Heisler ◽  
...  

2018 ◽  
Vol 9 (38) ◽  
pp. 7546-7555 ◽  
Author(s):  
Robert Godin ◽  
Takashi Hisatomi ◽  
Kazunari Domen ◽  
James R. Durrant

Time-resolved spectroscopies reveals remarkably long charge carrier lifetime in GaN:ZnO solid solution leading to hole accumulation key to water oxidation.


2016 ◽  
Vol 255 ◽  
pp. 338-343 ◽  
Author(s):  
Bert Stegemann ◽  
Jan Kegel ◽  
Lars Korte ◽  
Heike Angermann

Key steps in the fabrication of high-efficiency a-Si:H/c-Si heterojunction solar cells are the controlled pyramid texturing of the c-Si substrates to minimize reflection losses and the subsequent passivation by deposition of a high-quality a-Si:H layer to reduce recombination losses. This contribution reviews our recent results on the optimization of the wet-chemical texturing of crystalline Si wafers for the preparation of heterojunction solar cells with respect to low reflection losses, low recombination losses and long minority carrier lifetimes. It is demonstrated, that by joint optimization of both saw damage etch and texture etch the optical and electronic properties of the resulting pyramid morphology can be controlled. Effective surface passivation and thus long minority charge carrier lifetimes are achieved by deposition of intrinsic amorphous Si ((i) a-Si:H) layers. It is shown, that optimized (i) a-Si:H deposition parameters for planar Si (111) wafers can be transferred to a-Si:H layer deposition on random pyramid textured Si (100) wafers. Statistical analysis of the pyramid size distribution revealed that a low fraction of small pyramids leads to longer minority charge carrier lifetimes and, thus, a higher Voc potential for solar cells.


2017 ◽  
Vol 7 (22) ◽  
pp. 1701305 ◽  
Author(s):  
Shuyan Shao ◽  
Jian Liu ◽  
Hong-Hua Fang ◽  
Li Qiu ◽  
Gert H. ten Brink ◽  
...  

2003 ◽  
Vol 762 ◽  
Author(s):  
J. Deng ◽  
J.M. Pearce ◽  
V. Vlahos ◽  
R.J. Koval ◽  
R.W. Collins ◽  
...  

AbstractA study has been carried out on the forward bias dark current and the short circuit current -open circuit voltage characteristics of a-Si:H p-i-n solar cells over wide range of illumination intensities. Results are presented with superposition of these characteristics over extended current voltage regimes. This and the observed separation between these characteristics are consistent with the arguments presented based on first principle arguments. The conclusions drawn about the role of photo-generated carrier lifetimes, the densities of defects and the potential barriers in the i-layers adjacent to the n and p contacts are confirmed by numerical simulations. The key role of these potential barriers to the split in the characteristics offer new insight into both why the lack of superposition has been observed and the erroneous conclusions drawn about carrier transport for a-Si:H solar cells in the dark and under illumination.


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