Spatially resolved measurements of charge carrier lifetimes in CdTe solar cells

2013 ◽  
Vol 113 (12) ◽  
pp. 124510 ◽  
Author(s):  
C. Kraft ◽  
H. Hempel ◽  
V. Buschmann ◽  
T. Siebert ◽  
C. Heisler ◽  
...  
2004 ◽  
Vol 85 (9) ◽  
pp. 1529-1531 ◽  
Author(s):  
S. D. Feldman ◽  
R. T. Collins ◽  
V. Kaydanov ◽  
T. R. Ohno

2015 ◽  
Vol 119 (34) ◽  
pp. 19668-19673 ◽  
Author(s):  
Derya Baran ◽  
Michelle S. Vezie ◽  
Nicola Gasparini ◽  
Florent Deledalle ◽  
Jizhong Yao ◽  
...  

2016 ◽  
Vol 255 ◽  
pp. 338-343 ◽  
Author(s):  
Bert Stegemann ◽  
Jan Kegel ◽  
Lars Korte ◽  
Heike Angermann

Key steps in the fabrication of high-efficiency a-Si:H/c-Si heterojunction solar cells are the controlled pyramid texturing of the c-Si substrates to minimize reflection losses and the subsequent passivation by deposition of a high-quality a-Si:H layer to reduce recombination losses. This contribution reviews our recent results on the optimization of the wet-chemical texturing of crystalline Si wafers for the preparation of heterojunction solar cells with respect to low reflection losses, low recombination losses and long minority carrier lifetimes. It is demonstrated, that by joint optimization of both saw damage etch and texture etch the optical and electronic properties of the resulting pyramid morphology can be controlled. Effective surface passivation and thus long minority charge carrier lifetimes are achieved by deposition of intrinsic amorphous Si ((i) a-Si:H) layers. It is shown, that optimized (i) a-Si:H deposition parameters for planar Si (111) wafers can be transferred to a-Si:H layer deposition on random pyramid textured Si (100) wafers. Statistical analysis of the pyramid size distribution revealed that a low fraction of small pyramids leads to longer minority charge carrier lifetimes and, thus, a higher Voc potential for solar cells.


2003 ◽  
Vol 431-432 ◽  
pp. 421-425 ◽  
Author(s):  
D.L. Bätzner ◽  
G. Agostinelli ◽  
M. Campo ◽  
A. Romeo ◽  
J. Beier ◽  
...  

2001 ◽  
Vol 668 ◽  
Author(s):  
G. Agostinelli ◽  
E.D. Dunlop ◽  
B. Ebner ◽  
N. Gibson

ABSTRACTThis paper presents a detailed analysis of the spatially resolved evolution of External Quantum Efficiency of electrodeposited CdS/CdTe solar cells as a function of the duration of the post-deposition annealing process which promotes n to p-type conversion of electrodeposited CdTe. Strips of 30×4 cm were cut from deposited plates at various stages of the fabrication process and processed into cells. Annealing treatments were carried out on these strips at 400°C for times ranging from 1 to 120 minutes. 130 spectral response curves (in the range of 300 to 900 nm) have been measured to trace temporal evolution and spatial non-uniformity of the materials and extrapolate parameters such as effective diffusion lengths, evolution of the collection profiles, and junction depth. Correlation between these parameters suggests that recrystallisation does not take place uniformly but progresses through the film. The analysis of structural vs. optical parameters along the cells provides evidence for spatial non-uniformities of the state of crystallisation of as-deposited and annealed material. Poor performance has been observed near the edges of the cells where material is resistant to recrystallisation.


Solar RRL ◽  
2021 ◽  
Author(s):  
Anh Dinh Bui ◽  
Md Arafat Mahmud ◽  
Naeimeh Mozaffari ◽  
Rabin Basnet ◽  
The Duong ◽  
...  

2021 ◽  
pp. 2248-2255
Author(s):  
Agustín Bou ◽  
Haralds A̅boliņš ◽  
Arjun Ashoka ◽  
Héctor Cruanyes ◽  
Antonio Guerrero ◽  
...  

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