scholarly journals Understanding the visible-light photocatalytic activity of GaN:ZnO solid solution: the role of Rh2−yCryO3 cocatalyst and charge carrier lifetimes over tens of seconds

2018 ◽  
Vol 9 (38) ◽  
pp. 7546-7555 ◽  
Author(s):  
Robert Godin ◽  
Takashi Hisatomi ◽  
Kazunari Domen ◽  
James R. Durrant
Keyword(s):  
Solid Solution ◽  
Photocatalytic Activity ◽  
Charge Carrier ◽  
Water Oxidation ◽  
Carrier Lifetime ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
Charge Carrier Lifetime ◽  
Visible Light Photocatalytic

Time-resolved spectroscopies reveals remarkably long charge carrier lifetime in GaN:ZnO solid solution leading to hole accumulation key to water oxidation.

Unveiling the role of tetragonal BiVO4 as a mediator for dual phase BiVO4/g-C3N4 composite photocatalysts enabling highly efficient water oxidation via Z-scheme charge transfer

2019 ◽  
Vol 7 (46) ◽  
pp. 26279-26284 ◽  
Author(s):  
Hyung Jun Kong ◽  
Keon-Han Kim ◽  
Sangjun Kim ◽  
Heebin Lee ◽  
Jeung Ku Kang
Keyword(s):  
Charge Transfer ◽  
Charge Carrier ◽  
Water Oxidation ◽  
Carrier Lifetime ◽  
Dual Phase ◽  
Electron Mediator ◽  
Composite Photocatalysts ◽  
Zircon Type ◽  
Charge Carrier Lifetime

We present the dual phase photocatalysts enabling 3-fold longer charge carrier lifetime and 3-fold enhanced photocatalytic water oxidation by integrating a tetragonal zircon-type BiVO4 as an electron mediator for Z-scheme charge transfer.

scholarly journals Minority charge carrier lifetime mapping of crystalline silicon wafers by time-resolved photoluminescence imaging

2011 ◽  
Vol 110 (5) ◽  
pp. 054508 ◽  
Author(s):  
David Kiliani ◽  
Gabriel Micard ◽  
Benjamin Steuer ◽  
Bernd Raabe ◽  
Axel Herguth ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Lifetime ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Minority Charge Carrier ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Charge Carrier Lifetime

The Role of Chlorine during High Growth Rate Epitaxy

2015 ◽  
Vol 821-823 ◽  
pp. 141-144 ◽  
Author(s):  
Robin Karhu ◽  
Ian Booker ◽  
Jawad ul Hassan ◽  
Ivan Ivanov ◽  
Erik Janzén
Keyword(s):  
Growth Rate ◽  
Charge Carrier ◽  
Growth Rates ◽  
Growth Process ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
High Growth ◽  
High Growth Rate ◽  
Charge Carrier Lifetime

The influence of chlorine has been investigated for high growth rates of 4H-SiC epilayers on 4o off-cut substrates. Samples were grown at a growth rate of approximately 50 and 100 μm/h and various Cl/Si ratios. The growth rate, net doping concentration and charge carrier lifetime have been studied as a function of Cl/Si ratio. This study shows some indications that a high Cl concentration in the growth cell leads to less availability of Si during the growth process.

scholarly journals Unravelling Defect Passivation Mechanisms in Sulfur-treated Sb2Se3

2021 ◽  
Author(s):  
Rajiv Ramanujam Prabhakar ◽  
Thomas Moehl ◽  
Dennis Friedrich ◽  
Marinus Kunst ◽  
Sudhanshu Shukla ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Lifetime ◽  
Low Frequency ◽  
Surface Region ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Charge Carrier Dynamics ◽  
Recombination Efficiency ◽  
Defect Passivation ◽  
Charge Carrier Lifetime

<p>Sb<sub>2</sub>Se<sub>3 </sub>has emerged as an important photoelectrochemical (PEC) and photovoltaic (PV) material due to its rapid rise in photoconversion efficiencies. However, despite its binary nature, Sb<sub>2</sub>Se<sub>3 </sub>has a complex defect chemistry, which reduces the maximum photovoltage that can be obtained. Thus, it is important to understand these defects and to develop passivation strategies in order to further improve this material. In this work, a comprehensive investigation of the charge carrier dynamics of Sb<sub>2</sub>Se<sub>3</sub> and the influence of sulfur treatment on its optoelectronic properties was performed using time resolved microwave conductivity (TRMC), photoluminescence (PL) spectroscopy and low frequency Raman spectroscopy (LFRS). The key finding in this work is that upon sulfur treatment of Sb<sub>2</sub>Se<sub>3</sub>, the carrier lifetime is increased by the passivation of deep defects in Sb<sub>2</sub>Se<sub>3</sub> in both the surface region and the bulk, which is evidenced by increased charge carrier lifetime of TRMC decay dynamics, increased radiative recombination efficiency and decreased deep defect level emission (PL), and improved long-range order in the material (LFRS). These findings provide crucial insights into the defect passivation mechanisms in Sb<sub>2</sub>Se<sub>3</sub> paving the way for developing highly efficient PEC and PV devices.</p>

scholarly journals Unravelling Defect Passivation Mechanisms in Sulfur-treated Sb2Se3

2021 ◽  
Author(s):  
Rajiv Ramanujam Prabhakar ◽  
Thomas Moehl ◽  
Dennis Friedrich ◽  
Marinus Kunst ◽  
Sudhanshu Shukla ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Lifetime ◽  
Low Frequency ◽  
Surface Region ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Charge Carrier Dynamics ◽  
Recombination Efficiency ◽  
Defect Passivation ◽  
Charge Carrier Lifetime

<p>Sb<sub>2</sub>Se<sub>3 </sub>has emerged as an important photoelectrochemical (PEC) and photovoltaic (PV) material due to its rapid rise in photoconversion efficiencies. However, despite its binary nature, Sb<sub>2</sub>Se<sub>3 </sub>has a complex defect chemistry, which reduces the maximum photovoltage that can be obtained. Thus, it is important to understand these defects and to develop passivation strategies in order to further improve this material. In this work, a comprehensive investigation of the charge carrier dynamics of Sb<sub>2</sub>Se<sub>3</sub> and the influence of sulfur treatment on its optoelectronic properties was performed using time resolved microwave conductivity (TRMC), photoluminescence (PL) spectroscopy and low frequency Raman spectroscopy (LFRS). The key finding in this work is that upon sulfur treatment of Sb<sub>2</sub>Se<sub>3</sub>, the carrier lifetime is increased by the passivation of deep defects in Sb<sub>2</sub>Se<sub>3</sub> in both the surface region and the bulk, which is evidenced by increased charge carrier lifetime of TRMC decay dynamics, increased radiative recombination efficiency and decreased deep defect level emission (PL), and improved long-range order in the material (LFRS). These findings provide crucial insights into the defect passivation mechanisms in Sb<sub>2</sub>Se<sub>3</sub> paving the way for developing highly efficient PEC and PV devices.</p>

scholarly journals Flake-like InVO4 modified TiO2 nanofibers with longer carrier lifetimes for visible-light photocatalysts

RSC Advances ◽  
2018 ◽  
Vol 8 (48) ◽  
pp. 27073-27079 ◽  
Author(s):  
Yun Zhou ◽  
Lixin Liu ◽  
Tao Wu ◽  
Guolong Yuan ◽  
Junyu Li ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Visible Light ◽  
Carrier Lifetime ◽  
Electrospinning Process ◽  
One Pot ◽  
Tio2 Nanofibers ◽  
Visible Light Photocatalytic Activity ◽  
Carrier Lifetimes ◽  
Visible Light Photocatalytic

TiO2/InVO4 nanofibers have been designed and fabricated successfully by one-pot electrospinning process, which display longer carrier lifetime (22 ns) and enhanced visible-light photocatalytic activity.

scholarly journals Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon

Solar RRL ◽  
2021 ◽  
Author(s):  
Bernd Steinhauser ◽  
Tim Niewelt ◽  
Armin Richter ◽  
Rebekka Eberle ◽  
Martin Schubert
Keyword(s):  
Charge Carrier ◽  
Carrier Lifetime ◽  
Crystalline Silicon ◽  
Minority Charge Carrier ◽  
Charge Carrier Lifetime
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