scholarly journals Identifying the Atomic Layer Stacking of Mo2C MXene by Probe Molecule Adsorption

2021 ◽  
Author(s):  
Anabel Jurado ◽  
Ángel Morales-García ◽  
Francesc Viñes ◽  
Francesc Illas
Keyword(s):  
Atomic Layer ◽  
Probe Molecule ◽  
Molecule Adsorption ◽  
Layer Stacking

scholarly journals MXenes atomic layer stacking phase transitions and their chemical activity consequences

2020 ◽  
Vol 4 (5) ◽  
Author(s):  
José D. Gouveia ◽  
Francesc Viñes ◽  
Francesc Illas ◽  
José R. B. Gomes
Keyword(s):  
Phase Transitions ◽  
Atomic Layer ◽  
Chemical Activity ◽  
Layer Stacking

scholarly journals Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu2O Photocathodes

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 338
Author(s):  
Hak Hyeon Lee ◽  
Dong Su Kim ◽  
Ji Hoon Choi ◽  
Young Been Kim ◽  
Sung Hyeon Jung ◽  
...  
Keyword(s):  
Charge Transport ◽  
Atomic Layer ◽  
Absorption Efficiency ◽  
Open Circuit ◽  
Band Alignment ◽  
Conformal Coating ◽  
Layer Deposition ◽  
Layer Stacking ◽  
Doped Zno ◽  
P Type

An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu2O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu2O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al2O3 (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu2O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu2O/AZO/TiO2/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately −3.2 mA cm−2 at 0 VRHE for over 100 min.

Study of roughness evolution and layer stacking faults in short-period atomic layer deposited HfO2/Al2O3 multilayers

2011 ◽  
Vol 109 (6) ◽  
pp. 063524 ◽  
Author(s):  
M. de Pauli ◽  
A. Malachias ◽  
H. Westfahl ◽  
J. Bettini ◽  
A. Ramirez ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Atomic Layer ◽  
Short Period ◽  
Layer Stacking

Epitaxial Growth and Properties of Ca1-xSrxCuO2Thin Film (x=0.18 to 1.0) Prepared by Co-Deposition and Atomic Layer Stacking

1992 ◽  
Vol 31 (Part 2, No. 3A) ◽  
pp. L217-L220 ◽  
Author(s):  
Xiaomin Li ◽  
Masaki Kanai ◽  
Tomoji Kawai ◽  
Shichio Kawai
Keyword(s):  
Epitaxial Growth ◽  
Atomic Layer ◽  
Layer Stacking

scholarly journals Understanding CeO2 as a Deacon catalyst by probe molecule adsorption and in situ infrared characterisations

2013 ◽  
Vol 15 (10) ◽  
pp. 3454 ◽  
Author(s):  
Ramzi Farra ◽  
Sabine Wrabetz ◽  
Manfred E. Schuster ◽  
Eugen Stotz ◽  
Neil G. Hamilton ◽  
...  
Keyword(s):  
Probe Molecule ◽  
Molecule Adsorption
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