Study of roughness evolution and layer stacking faults in short-period atomic layer deposited HfO2/Al2O3 multilayers

2011 ◽  
Vol 109 (6) ◽  
pp. 063524 ◽  
Author(s):  
M. de Pauli ◽  
A. Malachias ◽  
H. Westfahl ◽  
J. Bettini ◽  
A. Ramirez ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Atomic Layer ◽  
Short Period ◽  
Layer Stacking

scholarly journals MXenes atomic layer stacking phase transitions and their chemical activity consequences

2020 ◽  
Vol 4 (5) ◽  
Author(s):  
José D. Gouveia ◽  
Francesc Viñes ◽  
Francesc Illas ◽  
José R. B. Gomes
Keyword(s):  
Phase Transitions ◽  
Atomic Layer ◽  
Chemical Activity ◽  
Layer Stacking

scholarly journals Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu2O Photocathodes

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 338
Author(s):  
Hak Hyeon Lee ◽  
Dong Su Kim ◽  
Ji Hoon Choi ◽  
Young Been Kim ◽  
Sung Hyeon Jung ◽  
...  
Keyword(s):  
Charge Transport ◽  
Atomic Layer ◽  
Absorption Efficiency ◽  
Open Circuit ◽  
Band Alignment ◽  
Conformal Coating ◽  
Layer Deposition ◽  
Layer Stacking ◽  
Doped Zno ◽  
P Type

An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu2O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu2O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al2O3 (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu2O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu2O/AZO/TiO2/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately −3.2 mA cm−2 at 0 VRHE for over 100 min.

InAs/InP short-period strained-layer superlattices grown by atomic layer epitaxy

1991 ◽  
Vol 115 (1-4) ◽  
pp. 324-327 ◽  
Author(s):  
Y. Sakuma ◽  
M. Ozeki ◽  
K. Kodama ◽  
N. Ohtsuka
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Strained Layer ◽  
Short Period ◽  
Strained Layer Superlattices

Epitaxial Growth and Properties of Ca1-xSrxCuO2Thin Film (x=0.18 to 1.0) Prepared by Co-Deposition and Atomic Layer Stacking

1992 ◽  
Vol 31 (Part 2, No. 3A) ◽  
pp. L217-L220 ◽  
Author(s):  
Xiaomin Li ◽  
Masaki Kanai ◽  
Tomoji Kawai ◽  
Shichio Kawai
Keyword(s):  
Epitaxial Growth ◽  
Atomic Layer ◽  
Layer Stacking

Transmission Electron Microscopy of AlxGa1-xN/SiC multilayer structures

1994 ◽  
Vol 52 ◽  
pp. 844-845
Author(s):  
W. T. Pike ◽  
T. George ◽  
M. A. Khan ◽  
J. N. Kuznia
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Band Gap ◽  
Basal Plane ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Lattice Match ◽  
Transmission Electron ◽  
Solar Blind ◽  
Short Period

The potential of wide-band-gap III-V nitrides as solar-blind ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wideband-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices (digital alloys); and the incorporation of SiC layers into AlxGa1-xN structures. By varying the relative periods in a GaN/AIN superlattice, it should bepossible to tailor the band gap of the composite to lie between the elemental values of 365nm for GaN and 200nm for AIN. The group IV semiconductor, SiC, has a close lattice match (< 3%) to AlxGa1-xN forgrowth on the basal plane. Demonstration of epitaxial growth for AlxGa1-xN/SiC multilayers could enable an extension of direct band-gap material towards the visible.The superlattice samples were grown by low-pressure metalorganic chemical-vapor deposition (MOCVD)using a unique switched atomic-layer-epitaxy (SALE) procedure (as first used by Dapkus et al. for GaAs). GaN was grown on the basal-plane sapphire substrates above a thin AlN layer, which has been foundto maximize the crystalline quality of the GaN film.

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