Ultralong Single-Crystal α-Bi4Br4 Nanobelts with a High Current-Carrying Capacity by Mechanical Exfoliation

2021 ◽  
Author(s):  
Lu Qiao ◽  
Xiaolu Xiong ◽  
Huixia Yang ◽  
Dongyun Chen ◽  
Yongkai Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
Carrying Capacity ◽  
High Current ◽  
Mechanical Exfoliation

Flexible 3D Graphene Transistors with Ionogel Dielectric for Low-Voltage Operation and High Current Carrying Capacity

2016 ◽  
Vol 2 (5) ◽  
pp. 1500355 ◽  
Author(s):  
Shideh Kabiri Ameri ◽  
Pramod K. Singh ◽  
Anthony J. D'Angelo ◽  
Matthew J. Panzer ◽  
Sameer R. Sonkusale
Keyword(s):  
Carrying Capacity ◽  
Low Voltage ◽  
High Current ◽  
3D Graphene ◽  
Low Voltage Operation

scholarly journals Unique features of the generation–recombination noise in quasi-one-dimensional van der Waals nanoribbons

Nanoscale ◽  
2018 ◽  
Vol 10 (42) ◽  
pp. 19749-19756 ◽  
Author(s):  
Adane K. Geremew ◽  
Sergey Rumyantsev ◽  
Matthew A. Bloodgood ◽  
Tina T. Salguero ◽  
Alexander A. Balandin
Keyword(s):  
Carrying Capacity ◽  
Van Der Waals ◽  
Low Frequency ◽  
Current Fluctuations ◽  
Electronic Noise ◽  
High Current ◽  
One Dimensional ◽  
Frequency Current

We describe the low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional ZrTe3 van der Waals nanoribbons, which have recently attracted attention owing to their extraordinary high current carrying capacity.

scholarly journals Mechanical exfoliation and layer number identification of single crystal monoclinic CrCl3

2020 ◽  
Vol 31 (39) ◽  
pp. 395706 ◽  
Author(s):  
S Kazim ◽  
M Alì ◽  
S Palleschi ◽  
G D’Olimpio ◽  
D Mastrippolito ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mechanical Exfoliation ◽  
Layer Number

The high current-carrying capacity of various carbon nanotube-based buckypapers

2008 ◽  
Vol 19 (18) ◽  
pp. 185710 ◽  
Author(s):  
Jin Gyu Park ◽  
Shu Li ◽  
Richard Liang ◽  
Xinyu Fan ◽  
Chuck Zhang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Carrying Capacity ◽  
High Current

Challenges and State-of-the-Art of Oxides on SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
Lori Lipkin ◽  
Mrinal Das ◽  
John Palmour
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
High Voltage ◽  
State Of The Art ◽  
Wide Band ◽  
High Current ◽  
Power Devices ◽  
Wide Band Gap ◽  
Single Crystal Sic ◽  
Lower Temperature

ABSTRACTSingle crystal SiC is a wide band-gap semiconductor with material characteristics that make it quite suitable for high voltage and high current applications. However, these devices are currently limited by their passivation. Significant improvements have been made with oxides on SiC. The most notable oxide processes are the re-oxidation anneal, a stacked ONO dielectric, and nitridation using an NO or N2O anneal. Additional improvements in lateral MOSFET mobility have been achieved using a surface channel implant, and lower temperature implant activation anneals. However, the passivation remains a significant limitation for SiC power devices.

Mechanical exfoliation and Raman spectra of ultrathin PbI2 single crystal

2016 ◽  
Vol 168 ◽  
pp. 68-71 ◽  
Author(s):  
Peihua Wangyang ◽  
Hui Sun ◽  
Xinghua Zhu ◽  
Dingyu Yang ◽  
Xiuying Gao
Keyword(s):  
Single Crystal ◽  
Raman Spectra ◽  
Mechanical Exfoliation

scholarly journals High current densities in a highly photoluminescent organic single-crystal light-emitting transistor

2010 ◽  
Vol 97 (4) ◽  
pp. 043307 ◽  
Author(s):  
Kosuke Sawabe ◽  
Taishi Takenobu ◽  
Satria Zulkarnaen Bisri ◽  
Takeshi Yamao ◽  
Shu Hotta ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Current ◽  
Light Emitting ◽  
Organic Single Crystal ◽  
Current Densities

Defects and Microstructures in the Surface Layer of Single-crystal Silicon In-duced by High-current Pulsed Electron Beam

2011 ◽  
Vol 25 (12) ◽  
pp. 1313-1317 ◽  
Author(s):  
Xue-Tao WANG ◽  
Qing-Feng GUAN ◽  
Qian-Qian GU ◽  
Dong-Jin PENG ◽  
Yan LI ◽  
...  
Keyword(s):  
Surface Layer ◽  
Electron Beam ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
High Current ◽  
Crystal Silicon ◽  
Pulsed Electron Beam
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