Flexible 3D Graphene Transistors with Ionogel Dielectric for Low-Voltage Operation and High Current Carrying Capacity

2016 ◽  
Vol 2 (5) ◽  
pp. 1500355 ◽  
Author(s):  
Shideh Kabiri Ameri ◽  
Pramod K. Singh ◽  
Anthony J. D'Angelo ◽  
Matthew J. Panzer ◽  
Sameer R. Sonkusale
Keyword(s):  
Carrying Capacity ◽  
Low Voltage ◽  
High Current ◽  
3D Graphene ◽  
Low Voltage Operation

High-current and low-voltage operation of metal-base organic transistors with LiF∕Al emitter

2006 ◽  
Vol 88 (15) ◽  
pp. 153512 ◽  
Author(s):  
Ken-ichi Nakayama ◽  
Shin-ya Fujimoto ◽  
Masaaki Yokoyama
Keyword(s):  
Low Voltage ◽  
Organic Transistors ◽  
High Current ◽  
Metal Base ◽  
Low Voltage Operation

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

High resolution at low voltage: A new approach

1989 ◽  
Vol 47 ◽  
pp. 76-77
Author(s):  
Arthur V. Jones
Keyword(s):  
Low Voltage ◽  
Emission Sources ◽  
New Approach ◽  
Design Concepts ◽  
Probe Diameter ◽  
Low Voltage Operation ◽  
Sufficient Intensity ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Immersion Type

With the introduction of field-emission sources and “immersion-type” objective lenses, the resolution obtainable with modern scanning electron microscopes is approaching that obtainable in STEM and TEM-but only with specific types of specimens. Bulk specimens still suffer from the restrictions imposed by internal scattering and the need to be conducting. Advances in coating techniques have largely overcome these problems but for a sizeable body of specimens, the restrictions imposed by coating are unacceptable.For such specimens, low voltage operation, with its low beam penetration and freedom from charging artifacts, is the method of choice.Unfortunately the technical dificulties in producing an electron beam sufficiently small and of sufficient intensity are considerably greater at low beam energies — so much so that a radical reevaluation of convential design concepts is needed.The probe diameter is usually given by

scholarly journals Synchronous Generator Rectification System Based on Double Closed-Loop Control of Backstepping and Sliding Mode Variable Structure

Electronics ◽  
2021 ◽  
Vol 10 (15) ◽  
pp. 1832
Author(s):  
Jinfeng Liu ◽  
Xin Qu ◽  
Herbert Ho-Ching Iu
Keyword(s):  
Closed Loop ◽  
Control Structure ◽  
Low Voltage ◽  
Sliding Mode ◽  
Variable Structure ◽  
Synchronous Generator ◽  
Closed Loop Control ◽  
High Current ◽  
Loop Control ◽  
Sliding Mode Variable Structure

Low-voltage and high-current direct current (DC) power supplies are essential for aerospace and shipping. However, its robustness and dynamic response need to be optimized further on some special occasions. In this paper, a novel rectification system platform is built with the low-voltage and high-current permanent magnet synchronous generator (PMSG), in which the DC voltage double closed-loop control system is constructed with the backstepping control method and the sliding mode variable structure (SMVS). In the active component control structure of this system, reasonable virtual control variables are set to obtain the overall structural control variable which satisfied the stability requirements of Lyapunov stability theory. Thus, the fast-tracking and the global adjustment of the system are realized and the robustness is improved. Since the reactive component control structure is simple and no subsystem has to be constructed, the SMVS is used to stabilize the system power factor. By building a simulation model and experimental platform of the 5 V/300 A rectification module based on the PMSG, it is verified that the power factor of the system can reach about 98.5%. When the load mutation occurs, the DC output achieves stability again within 0.02 s, and the system fluctuation rate does not exceed 2%.

Low-voltage operation of the organic thin film transistor with a diagonal configuration

2003 ◽  
Author(s):  
Toshihide Kamata ◽  
Manabu Yoshida ◽  
Sei Uemura ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Low Voltage Operation
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