Near-Surface Composition, Structure, and Energetics of TiO2 Thin Films: Characterization of Stress-Induced Defect States in Oxides Prepared via Chemical Vapor Deposition versus Solution Deposition from Sol–Gel Precursors

2021 ◽  
Author(s):  
R. Clayton Shallcross ◽  
Neal R. Armstrong
Keyword(s):  
Surface Composition ◽  
Sol Gel ◽  
Chemical Vapor ◽  
Defect States ◽  
Tio2 Thin Films ◽  
Solution Deposition ◽  
Near Surface ◽  
Composition Structure ◽  
Versus Solution

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

Oxygen gas sensing and microstructure characterization of sol-gel-prepared MoO3-TiO2 thin films

1999 ◽  
Author(s):  
Yongxiang Li ◽  
Muralihar K. Ghantasala ◽  
Kosmas Galatsis ◽  
Wojtek Wlodarski
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
Sol Gel ◽  
Microstructure Characterization ◽  
Tio2 Thin Films ◽  
Oxygen Gas

Synthesis and characterization of Fe2O3–TiO2 thin films grown by the sol–gel method

2004 ◽  
Vol 1 (S1) ◽  
pp. S116-S120 ◽  
Author(s):  
E. Sánchez-Mora ◽  
E. Gómez-Barojas ◽  
J.M. Gracia-Jiménez ◽  
R. Silva-González ◽  
F. Pérez-Rodríguez
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Synthesis And Characterization ◽  
Tio2 Thin Films ◽  
Gel Method ◽  
Sol Gel Method

Microstructure characterization of sol-gel prepared MoO3–TiO2 thin films for oxygen gas sensors

2001 ◽  
Vol 19 (3) ◽  
pp. 904-909 ◽  
Author(s):  
Yongxiang Li ◽  
Kosmas Galatsis ◽  
Wojtek Wlodarski ◽  
Muralihdar Ghantasala ◽  
Salvy Russo ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
Sol Gel ◽  
Microstructure Characterization ◽  
Tio2 Thin Films ◽  
Oxygen Gas

Preparation and Characterization of SiO2/VO2 Composite Particles

2010 ◽  
Vol 152-153 ◽  
pp. 797-800
Author(s):  
Ai Hong Bi ◽  
Jin Hua Zhu
Keyword(s):  
Sol Gel ◽  
Silica Film ◽  
Composite Particles ◽  
Basic Study ◽  
Coating Agent ◽  
Visible Transmittance ◽  
Smart Coatings ◽  
Structure Surface ◽  
Composition Structure

In order to enhance the visible transmittance, a compact silica film was successfully coated on the surface of VO2 particles by the sol-gel method, using sodium silicate as the coating agent and hydrochloric acid as the neutralization agent. The composition, structure, surface bonding mode and the visible transmittance of the products were characterized by means of XRD, SEM, FTIR and UV-Vis. The results showed that SiO2/VO2 composite particles can produced by this method, and the visible transmittance was higher than the pure VO2. It was a basic study in the applications of the smart coatings based on VO2 powders.

Preparation and Characterization of Transparent Electrodes Based on CNT-s Doped Metal Oxides

2011 ◽  
Vol 324 ◽  
pp. 133-136
Author(s):  
Madis Paalo ◽  
Tanel Tätte ◽  
Eugene Shulga ◽  
Madis Lobjakas ◽  
Aare Floren ◽  
...  
Keyword(s):  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Electrode Materials ◽  
Sol Gel ◽  
Physical Stability ◽  
Chemical Vapor ◽  
Transparent Electrode ◽  
Electrical And Optical Properties ◽  
Materials Used

In the present work, it is shown that carbon nanotube-doped transition metal oxides are potential candidates for use as ceramic transparent electrode materials. Used carbon nanotubes (CNT-s) are synthesized by using chemical vapor deposition (CVD) method. Electrodes in shape of fibers are obtained via inexpensive and low temperature sol-gel method. Due to extraordinary electrical and optical properties of CNT-s and good chemical and physical stability of metal oxide ceramics, resulting composites could be an interesting subject for industry.

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