Efficient Direct Band Gap Photovoltaic Material Predicted Via Doping Double Perovskites Cs2AgBiX6 (X = Cl, Br)

2021 ◽  
Author(s):  
Xinbo Ma ◽  
Zhenyu Li ◽  
Jinlong Yang
Keyword(s):  
Band Gap ◽  
Double Perovskites ◽  
Direct Band Gap ◽  
Direct Band ◽  
Photovoltaic Material

scholarly journals Indirect-to-direct band gap transition and optical properties of metal alloys of Cs2Te1−xTixI6: a theoretical study

RSC Advances ◽  
2020 ◽  
Vol 10 (60) ◽  
pp. 36734-36740
Author(s):  
Diwen Liu ◽  
Wenying Zha ◽  
Rusheng Yuan ◽  
Benyong Lou ◽  
Rongjian Sa
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Theoretical Study ◽  
Metal Alloys ◽  
Double Perovskites ◽  
Direct Band Gap ◽  
Photovoltaic Applications ◽  
Direct Band

In recent years, double perovskites have attracted considerable attention as potential candidates for photovoltaic applications.

In- and Ga-based inorganic double perovskites with direct bandgaps for photovoltaic applications

2017 ◽  
Vol 19 (32) ◽  
pp. 21691-21695 ◽  
Author(s):  
Jun Dai ◽  
Liang Ma ◽  
Minggang Ju ◽  
Jinsong Huang ◽  
Xiao Cheng Zeng
Keyword(s):  
Band Gap ◽  
Double Perovskites ◽  
Direct Band Gap ◽  
Photovoltaic Applications ◽  
Direct Band

Double perovskites in the form of A2B′B′′X6 (A = Cs, B′ = Cu, Ag, Au, B′′ = In, Ga, X = Cl, Br, I) are examined for photovoltaic applications. Only Cs2AgInBr6 is predicted to be thermodynamically stable with a direct band gap in the range of 0.9–1.6 eV.

A hidden symmetry-broken phase of MoS2 revealed as a superior photovoltaic material

2018 ◽  
Vol 6 (33) ◽  
pp. 16087-16093 ◽  
Author(s):  
Meiling Xu ◽  
Yue Chen ◽  
Fen Xiong ◽  
Jianyun Wang ◽  
Yanhui Liu ◽  
...  
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Photovoltaic Efficiency ◽  
Hidden Symmetry ◽  
Direct Band ◽  
Photovoltaic Material

We predict a novel 1Td-MoS2 with a direct band gap of 1.27 eV which reaches a high photovoltaic efficiency of ∼33.3%.

Tailorable Indirect to Direct Band-Gap Double Perovskites with Bright White-Light Emission: Decoding Chemical Structure Using Solid-State NMR

2020 ◽  
Vol 142 (24) ◽  
pp. 10780-10793 ◽  
Author(s):  
Abhoy Karmakar ◽  
Guy M. Bernard ◽  
Alkiviathes Meldrum ◽  
Anton O. Oliynyk ◽  
Vladimir K. Michaelis
Keyword(s):  
Solid State ◽  
Band Gap ◽  
White Light ◽  
Solid State Nmr ◽  
Chemical Structure ◽  
Light Emission ◽  
Double Perovskites ◽  
Direct Band Gap ◽  
Bright White Light ◽  
Direct Band

Elemental Se: fundamentals and its optoelectronic applications

2019 ◽  
Vol 7 (8) ◽  
pp. 2199-2206 ◽  
Author(s):  
Menghua Zhu ◽  
Guangda Niu ◽  
Jiang Tang
Keyword(s):  
Melting Point ◽  
Band Gap ◽  
Elemental Selenium ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optoelectronic Applications ◽  
Photovoltaic Material

Elemental selenium (Se), as the oldest photovoltaic material, has many advantages such as a direct band gap, earth-abundance, simple composition, nontoxicity, and a low melting point for optoelectronic applications.

Optical Studies of Poly (N-Carbazole) (PVK) Blending with Polyvinylpyrrolidone (PVP) Using Tauc/Davis-Mott Model

2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  
Keyword(s):  
Band Gap ◽  
Urbach Energy ◽  
Quartz Substrate ◽  
Optical Studies ◽  
Direct Band Gap ◽  
Mott Model ◽  
Blended Polymer ◽  
Electronic Parameters ◽  
Direct Band ◽  
Indirect Band Gap

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.

Theoretical Derivations of a Direct Band Gap Semiconductor of SiC Doped with Ge

2014 ◽  
Vol 44 (1) ◽  
pp. 167-176 ◽  
Author(s):  
Adit Ghosh ◽  
Chandrika Varadachari
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band
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