A hidden symmetry-broken phase of MoS2 revealed as a superior photovoltaic material

2018 ◽  
Vol 6 (33) ◽  
pp. 16087-16093 ◽  
Author(s):  
Meiling Xu ◽  
Yue Chen ◽  
Fen Xiong ◽  
Jianyun Wang ◽  
Yanhui Liu ◽  
...  
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Photovoltaic Efficiency ◽  
Hidden Symmetry ◽  
Direct Band ◽  
Photovoltaic Material

We predict a novel 1Td-MoS2 with a direct band gap of 1.27 eV which reaches a high photovoltaic efficiency of ∼33.3%.

Elemental Se: fundamentals and its optoelectronic applications

2019 ◽  
Vol 7 (8) ◽  
pp. 2199-2206 ◽  
Author(s):  
Menghua Zhu ◽  
Guangda Niu ◽  
Jiang Tang
Keyword(s):  
Melting Point ◽  
Band Gap ◽  
Elemental Selenium ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optoelectronic Applications ◽  
Photovoltaic Material

Elemental selenium (Se), as the oldest photovoltaic material, has many advantages such as a direct band gap, earth-abundance, simple composition, nontoxicity, and a low melting point for optoelectronic applications.

Optical Studies of Poly (N-Carbazole) (PVK) Blending with Polyvinylpyrrolidone (PVP) Using Tauc/Davis-Mott Model

2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  
Keyword(s):  
Band Gap ◽  
Urbach Energy ◽  
Quartz Substrate ◽  
Optical Studies ◽  
Direct Band Gap ◽  
Mott Model ◽  
Blended Polymer ◽  
Electronic Parameters ◽  
Direct Band ◽  
Indirect Band Gap

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.

Theoretical Derivations of a Direct Band Gap Semiconductor of SiC Doped with Ge

2014 ◽  
Vol 44 (1) ◽  
pp. 167-176 ◽  
Author(s):  
Adit Ghosh ◽  
Chandrika Varadachari
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band

Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

2015 ◽  
Vol 54 (10) ◽  
pp. 3112-3115 ◽  
Author(s):  
Shengli Zhang ◽  
Zhong Yan ◽  
Yafei Li ◽  
Zhongfang Chen ◽  
Haibo Zeng
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band

Strain-induced semimetal-to-semiconductor transition and indirect-to-direct band gap transition in monolayer 1T-TiS2

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83876-83879 ◽  
Author(s):  
Chengyong Xu ◽  
Paul A. Brown ◽  
Kevin L. Shuford
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Plane Strain ◽  
Material Properties ◽  
First Principles ◽  
Tensile Strain ◽  
First Principles Calculations ◽  
Direct Band Gap ◽  
Direct Band ◽  
Uniform Plane

We have investigated the effect of uniform plane strain on the electronic properties of monolayer 1T-TiS2using first-principles calculations. With the appropriate tensile strain, the material properties can be transformed from a semimetal to a direct band gap semiconductor.

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