Tailorable Indirect to Direct Band-Gap Double Perovskites with Bright White-Light Emission: Decoding Chemical Structure Using Solid-State NMR

2020 ◽  
Vol 142 (24) ◽  
pp. 10780-10793 ◽  
Author(s):  
Abhoy Karmakar ◽  
Guy M. Bernard ◽  
Alkiviathes Meldrum ◽  
Anton O. Oliynyk ◽  
Vladimir K. Michaelis
Keyword(s):  
Solid State ◽  
Band Gap ◽  
White Light ◽  
Solid State Nmr ◽  
Chemical Structure ◽  
Light Emission ◽  
Double Perovskites ◽  
Direct Band Gap ◽  
Bright White Light ◽  
Direct Band

scholarly journals Indirect-to-direct band gap transition and optical properties of metal alloys of Cs2Te1−xTixI6: a theoretical study

RSC Advances ◽  
2020 ◽  
Vol 10 (60) ◽  
pp. 36734-36740
Author(s):  
Diwen Liu ◽  
Wenying Zha ◽  
Rusheng Yuan ◽  
Benyong Lou ◽  
Rongjian Sa
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Theoretical Study ◽  
Metal Alloys ◽  
Double Perovskites ◽  
Direct Band Gap ◽  
Photovoltaic Applications ◽  
Direct Band

In recent years, double perovskites have attracted considerable attention as potential candidates for photovoltaic applications.

Multitasking behaviour of a small organic compound: solid state bright white-light emission, mechanochromism and ratiometric sensing of Al(iii) and pyrophosphate

2019 ◽  
Vol 55 (35) ◽  
pp. 5127-5130 ◽  
Author(s):  
Sanghamitra Sinha ◽  
Bijit Chowdhury ◽  
Uttam Kumar Ghorai ◽  
Pradyut Ghosh
Keyword(s):  
Solid State ◽  
Organic Compound ◽  
White Light ◽  
Organic Molecule ◽  
Light Emission ◽  
White Light Emission ◽  
Ratiometric Fluorescence ◽  
Fluorescence Sensing ◽  
Bright White Light ◽  
Ratiometric Fluorescence Sensing

Solid state bright white-light emission, mechanochromism and ratiometric fluorescence sensing of Al3+ and pyrophosphate by a single organic molecule are demonstrated.

Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure

2016 ◽  
Vol 602 ◽  
pp. 43-47 ◽  
Author(s):  
Dong Wang ◽  
Takayuki Maekura ◽  
Keisuke Yamamoto ◽  
Hiroshi Nakashima
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Light Emission ◽  
Direct Band Gap ◽  
Direct Band

Synthesis and investigation into the structural, electronic and electrical properties of K2Pb(OCN)I3

2019 ◽  
Vol 48 (36) ◽  
pp. 13813-13819
Author(s):  
Amira Siai ◽  
Alexandru Oprea ◽  
Markus Ströbele ◽  
Hans-Jürgen Meyer
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
Electrical Properties ◽  
Band Gap ◽  
Solid State Reaction ◽  
High Dielectric Constant ◽  
Compound K ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Dielectric

The new compound K2Pb(OCN)I3 was synthesized by the solid-state reaction of PbI2 and KOCN. Built-up form two interpenetrating tetrahedral-octahedral frameworks, it is a direct band-gap semiconductor (2.4 eV) with rather high dielectric constant.

In- and Ga-based inorganic double perovskites with direct bandgaps for photovoltaic applications

2017 ◽  
Vol 19 (32) ◽  
pp. 21691-21695 ◽  
Author(s):  
Jun Dai ◽  
Liang Ma ◽  
Minggang Ju ◽  
Jinsong Huang ◽  
Xiao Cheng Zeng
Keyword(s):  
Band Gap ◽  
Double Perovskites ◽  
Direct Band Gap ◽  
Photovoltaic Applications ◽  
Direct Band

Double perovskites in the form of A2B′B′′X6 (A = Cs, B′ = Cu, Ag, Au, B′′ = In, Ga, X = Cl, Br, I) are examined for photovoltaic applications. Only Cs2AgInBr6 is predicted to be thermodynamically stable with a direct band gap in the range of 0.9–1.6 eV.

A COMPUTATIONAL DESIGN OF Si-BASED DIRECT BAND-GAP MATERIALS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4279-4284 ◽  
Author(s):  
HUANG MEI-CHUN ◽  
ZHANG JIAN-LI ◽  
LI HUI-PING ◽  
ZHU ZIZHONG
Keyword(s):  
Band Gap ◽  
Light Emission ◽  
Silicon Layer ◽  
Computational Design ◽  
Structural Formula ◽  
Direct Band Gap ◽  
Direct Band ◽  
Indirect Band Gap ◽  
Three Body ◽  
New Si

A bulk silicon is an indirect band gap semiconductor, the radiative transitions in silicon involves a electron-hole-phonon three-body processes and is therefore making it an inability of light emission. In order to integrate Si-based microelectronics with optical components, a best solution is to design a Si-based material with direct band-gap. Here we suggest a new Si-based superlattice consists of a nano-silicon layer and a VI-atom monolayer with dimer-structures in the interfaces between silicon and VI-atom layers. The structural formula is VI/Si m / VI/Si m / VI , (m = 2n or/and 2n+1, n ≥ 3). A simple form of (2×1) surface reconstruction has been considered in the ab initio calculation of electronic structures for this Si-based superlattices system. It is found from our computational design that a Se/Si 10/ Se/Si 10/ Se superlattice has a direct band-gap at Γ point. As a kind of new Si-based materials, the important potential and advantages in optoelectronic applications will be discussed.

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