Hot Carrier Transfer in a Graphene/PtSe2 Heterostructure Tuned by a Substrate-Introduced Effective Electric Field

2021 ◽  
Author(s):  
Qiu-Shi Ma ◽  
Wenjie Zhang ◽  
Chunwei Wang ◽  
Ruihua Pu ◽  
Cheng-Wei Ju ◽  
...  
Keyword(s):  
Electric Field ◽  
Hot Carrier ◽  
Carrier Transfer ◽  
Effective Electric Field

Triggering photocatalytic activity of carbon dot-based nanocomposites by self-supplying peroxide

2021 ◽  
Author(s):  
Tingting Cai ◽  
Qing Chang ◽  
Bin Liu ◽  
Caihong Hao ◽  
Jinlong Yang ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Electric Field ◽  
Catalytic Process ◽  
Charge Accumulation ◽  
Carbon Dot ◽  
Carrier Transfer ◽  
Polarization Electric Field

The photocatalyst performance highly relies on the quantity of carrier transfer from the bulk to surface during the catalytic process. However, the polarization electric field induced by charge accumulation at...

Measurement of the effective electric field radius on Digital ion trap spectrometer

The Analyst ◽  
2021 ◽  
Author(s):  
Fuxing Xu ◽  
Weimin Wang ◽  
Bingjun Qian ◽  
Liuyu Jin ◽  
Chuanfan Ding
Keyword(s):  
Electric Field ◽  
Signal Intensity ◽  
Ion Trap ◽  
Great Influence ◽  
Mass Range ◽  
Ion Trapping ◽  
Fundamental Parameter ◽  
Digital Ion Trap ◽  
Effective Electric Field

The effective electric field radius is a fundamental parameter of ion trap which has great influence on ion trapping capability, signal intensity, mass range and some other properties of ion...

Spectral Dependence of Nanocrystal Photoionization Probability: The Role of Hot-Carrier Transfer

ACS Nano ◽  
2011 ◽  
Vol 5 (6) ◽  
pp. 5045-5055 ◽  
Author(s):  
Lazaro A. Padilha ◽  
István Robel ◽  
Doh C. Lee ◽  
Prashant Nagpal ◽  
Jeffrey M. Pietryga ◽  
...  
Keyword(s):  
Spectral Dependence ◽  
Hot Carrier ◽  
Carrier Transfer

Design of Metal-Semiconductor-Metal Ultra-Violet Detector on Gallium Nitride

2001 ◽  
Vol 680 ◽  
Author(s):  
Wenhua Gu ◽  
Soo Jin Chua ◽  
Xin Hai Zhang
Keyword(s):  
Gallium Nitride ◽  
Electric Field ◽  
Field Intensity ◽  
Electric Field Intensity ◽  
Ultra Violet ◽  
Depletion Region ◽  
Structure Parameters ◽  
Metal Semiconductor Metal ◽  
Effective Electric Field ◽  
Response Current

ABSTRACTThe design of Gallium Nitride based Metal-Semiconductor-Metal Ultra-Violet detector is discussed. We introduce a simulation model using Medici to describe the performances of such detectors. Structure parameters, such as the inter-digitated electrode dimension and the GaN layer thickness, are optimized for response current and time using this model. The simulation results can be explained by the variation of depletion region. We introduce the “effective electric field intensity” to describe the depletion region. The relationship between the “effective electric field intensity” and structure parameters are simulated and discussed.

Effective electric field in the n-type moderately doped region of silicon devices at 300 K

1983 ◽  
Vol 117 (1) ◽  
pp. K23-K26 ◽  
Author(s):  
H. Van Cong ◽  
S. Brunet ◽  
S. Charar ◽  
S. Benet ◽  
C. Delseny ◽  
...  
Keyword(s):  
Electric Field ◽  
Silicon Devices ◽  
Effective Electric Field

An electron temperature model of the nMOSFETs

2020 ◽  
Vol 34 (12) ◽  
pp. 2050119
Author(s):  
Meng Zhang ◽  
Ruohe Yao
Keyword(s):  
Temperature Gradient ◽  
Electric Field ◽  
Electron Temperature ◽  
Energy Balance Equation ◽  
Electron Velocity ◽  
Temperature Model ◽  
Hot Carrier ◽  
Carrier Effect ◽  
Hot Carrier Effect ◽  
The Impact

With the development of IC manufacturing process, the device dimensions have been on the nanoscale, while the device performance, such as the electron velocity, mobility and thermal noise, is significantly affected by the hot carrier effect. This paper proposes an electron temperature model to accurately predict the hot carrier effect. The channel transverse electric field is firstly derived by using the channel electric potential equation, taking into account the boundary conditions of the electric field. Based on the electric field equation, the energy balance equation is solved involving the impact of the temperature gradient and then the electron temperature model is established. The impact of the electron temperature on the channel mobility and of temperature gradient on the electron velocity has also been investigated. The results show that when the device enters the nanoscale, the electron mobility is more susceptible to the influence of the electric field and the electron temperature, and the impact of the temperature gradient on the velocity becomes obviously greater. The electron temperature model proposed in this paper can be applied to the performance analysis and modeling of nanosized MOSFETs.

scholarly journals Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 233 ◽  
Author(s):  
Feng-Tso Chien ◽  
Chih-Ping Hung ◽  
Hsien-Chin Chiu ◽  
Tsung-Kuei Kang ◽  
Ching-Hwa Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Stress Test ◽  
Thin Film Transistor ◽  
Double Gate ◽  
Silicon Thin Film ◽  
Hot Carrier ◽  
Single Top ◽  
Lightly Doped Drain ◽  
A Current

A current improved and electric field reduced double-gate (DG) polycrystalline silicon thin-film transistor with two-step source/drain (DGTSD-TFT) design is proposed and demonstrated in this study. The two-step source/drain (TSD) design, which consists of a raised source/drain (RSD) area together with a partial gate overlapped lightly doped drain (P-GOLDD) structure, can lower the device drain electric field (DEF) to reveal a better device performance. Comparisons have been made with respect to a traditional single top gate (STG) device. The operation current of the proposed DGTSD-TFT is almost twice as large as that of the STG structure. The OFF-state leakage current and kink effect, as well as the ON/OFF current ratio for this double-gate and two-step source/drain structure, are also improved simultaneously because of a reduced DEF. A hot carrier stress test reveals that that two-step source/drain structure can achieve more stable device characteristics than the traditional device.

scholarly journals Modified Josephson Relation

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3407-3410
Author(s):  
Jan Koláček ◽  
Pavel Lipavský
Keyword(s):  
Electric Field ◽  
Low Temperatures ◽  
Ohmic Contacts ◽  
Chemical Potential ◽  
Electrochemical Potential ◽  
Type Ii ◽  
Type Ii Superconductors ◽  
Effective Electric Field

For type II superconductors, Josephson has shown that vortices moving with velocity v L create an effective electric field E′= -v L ×B V . By definition the effective electric field is gradient of the electrochemical potential, what is the quantity corresponding to voltage observed with the use of Ohmic contacts. It relates to the true electric field E via the local chemical potential μ as E′=E-∇μ/e. We argue that at low temperatures the true electric field in the bulk can be approximated by a modified Josephson relation E=(v S -v L )×B V , where v S is the condensate velocity.

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