Elimination of Grain Boundaries in Graphene Growth on a Cu–Ni Alloyed Substrate by Chemical Vapor Deposition

2021 ◽  
Author(s):  
Haohao Shi ◽  
Yuxiao Guo ◽  
Zhikai Qi ◽  
Kun Xie ◽  
Runxiao Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Grain Boundaries ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Graphene Growth

Effect of Cu surface treatment in graphene growth by chemical vapor deposition

2019 ◽  
Vol 236 ◽  
pp. 403-407 ◽  
Author(s):  
Seong-Yong Cho ◽  
Minsu Kim ◽  
Min-Sik Kim ◽  
Min-Hyun Lee ◽  
Ki-Bum Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Treatment ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Graphene Growth

Effects of Process Parameters on Graphene Growth Via Low-Pressure Chemical Vapor Deposition

2020 ◽  
Vol 8 (3) ◽  
Author(s):  
Byoungdo Lee ◽  
Weishen Chu ◽  
Wei Li
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
Low Pressure ◽  
Large Set ◽  
Graphene Growth ◽  
Pressure Chemical

Abstract Graphene has attracted enormous research interest due to its extraordinary material properties. Process control to achieve high-quality graphene is indispensable for graphene-based applications. This research investigates the effects of process parameters on graphene quality in a low-pressure chemical vapor deposition (LPCVD) graphene growth process. A fractional factorial design of experiment is conducted to provide understanding on not only the main effect of process parameters, but also the interaction effect among them. Graphene quality including the number of layers and grain size is analyzed. To achieve monolayer graphene with large grain size, a condition with low CH4–H2 ratio, short growth time, high growth pressure, high growth temperature, and slow cooling rate is recommended. This study considers a large set of process parameters with their interaction effects and provides guidelines to optimize graphene growth via LPCVD focusing on the number of graphene layers and the grain size.

The growth modes of graphene in the initial stage of a chemical vapor-deposition process

RSC Advances ◽  
2016 ◽  
Vol 6 (94) ◽  
pp. 91157-91162 ◽  
Author(s):  
Zhaoming Fu ◽  
Yipeng An
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Graphene Growth ◽  
Carbon Chains ◽  
Growth Modes ◽  
Initial Stage ◽  
Vapor Deposition Process

The different growth modes of carbon chains and carbon islands in the initial stage of graphene growth.

Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

2013 ◽  
Vol 113 (20) ◽  
pp. 203501 ◽  
Author(s):  
A. Michon ◽  
S. Vézian ◽  
E. Roudon ◽  
D. Lefebvre ◽  
M. Zielinski ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Graphene Growth

3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers

2017 ◽  
Vol 897 ◽  
pp. 15-18 ◽  
Author(s):  
Philipp Schuh ◽  
Grazia Litrico ◽  
Francesco La Via ◽  
Marco Mauceri ◽  
Peter J. Wellmann
Keyword(s):  
Chemical Vapor Deposition ◽  
Grain Boundaries ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Crystalline Quality ◽  
High Crystalline Quality ◽  
Sublimation Growth

We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3C-SiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm2 which can be enlarged further. The high crystalline quality is characterized by the absence of secondary polytype inclusions and the absence double position grain boundaries.

Understanding the Reaction Kinetics to Optimize Graphene Growth on Cu by Chemical Vapor Deposition

2017 ◽  
Vol 529 (11) ◽  
pp. 1700029 ◽  
Author(s):  
Jürgen Kraus ◽  
Lena Böbel ◽  
Gregor Zwaschka ◽  
Sebastian Günther
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Graphene Growth
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