Characteristics of Carbon Nanowalls According to the Indium Tin Oxide Interlayer Thickness

2020 ◽  
Vol 12 (8) ◽  
pp. 1261-1264
Author(s):  
Hyeokjoo Choi ◽  
Chiwon Choi ◽  
Seok Hun Kwon ◽  
Young Park ◽  
Wonseok Choi
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Chemical Vapor ◽  
Rf Magnetron Sputtering ◽  
Adhesive Force ◽  
Limited Range ◽  
Interlayer Thickness ◽  
Washing Machine ◽  
Carbon Nanowalls ◽  
Contact Angle Analysis

Materials with low adhesion have a limited range of applications. To solve this problem, the stress can be alleviated by inserting an interlayer between the substrate and the semiconductor material. As such, the adhesion can also be improved by depositing an interlayer between the carbon nanowall (CNW) with a low adhesive force and the substrate. In this study, indium tin oxide (ITO), whose thickness was controlled via radio frequency (RF) magnetron sputtering on the substrate, was used as an interlayer, and CNWs were grown using microwaveplasma-enhanced chemical vapor deposition (MPECVD) with a mixture of methane (CH4) and hydrogen (H2) gases. To confirm the adhesion between the CNWs and the substrate according to the thickness of the ITO interlayer, the dissociation of the CNWs was confirmed using an ultrasonic washing machine. Hall measurement was used to investigate the electrical properties. Afterwards, to analyze the change in the surface structure, contact angle analysis and field emission scanning electron microscopy (FESEM) analysis performed.

scholarly journals Adhesion-Increased Carbon Nanowalls for the Electrodes of Energy Storage Systems

Energies ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4759 ◽  
Author(s):  
Hyeokjoo Choi ◽  
Seokhun Kwon ◽  
Hyunil Kang ◽  
Jung Hyun Kim ◽  
Wonseok Choi
Keyword(s):  
Energy Storage ◽  
Indium Tin Oxide ◽  
Microwave Plasma ◽  
Storage Systems ◽  
Transparent Conducting Oxide ◽  
Chemical Vapor ◽  
Rf Magnetron Sputtering ◽  
Energy Storage Systems ◽  
Carbon Nanowalls ◽  
Carbon Based Nanomaterials

Carbon nanowalls (CNWs), which are used as electrodes for secondary batteries in energy storage systems (ESSs), have the widest reaction surface area among the carbon-based nanomaterials, but their application is rare due to their low adhesion with substrates. Indium tin oxide (ITO), a representative transparent conducting oxide (TCO) material, is widely used as the electrode for displays, solar cells, etc. Titanium nitride (TiN) is a well-used material as an interlayer for improving the adhesion between two materials. In this study, ITO or TiN thin films were used as an interlayer to improve the adhesion between a CNW and a substrate. The interlayer was deposited on the substrate using a radio frequency (RF) magnetron sputtering system with a four-inch TiN or ITO target. CNWs were grown on the interlayer-coated substrate using a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system with a mixture of methane (CH4) and hydrogen (H2) gases. The adhesion of the CNW/interlayer/substrate structure was observed through ultrasonic cleaning.

Characteristics of Indium Tin Oxide Films Deposited by DC and RF Magnetron Sputtering

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3364-3369 ◽  
Author(s):  
Wenli Deng ◽  
Taizo Ohgi ◽  
Hitoshi Nejo ◽  
Daisuke Fujita
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Tin Oxide Films

Influence of Substrate Temperature on Morphological and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 281-285
Author(s):  
S. Najwa ◽  
A. Shuhaimi ◽  
N. Ameera ◽  
K.M. Hakim ◽  
M. Sobri ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Average Roughness ◽  
Influence Of Substrate

Indium tin oxide was prepared using RF magnetron sputtering at different substrate temperature. The morphological and electrical properties were investigated. Morphological properties were observed by atomic force microscopy. Electrical properties were measured using standard two-point probe measurements. The result shows that the average roughness and peak to valley value are highest at high substrate temperature. The watershed analysis shows that the total grain boundaries are highest at the substrate temperature of 200°C. The lowest resistivity value of 9.57×10-5 Ωcm is obtained from ITO nanocolumn deposited at substrate temperature of 200°C. The improvement of morphological and electrical properties as transparent conducting oxide was observed from ITO nanocolumn deposited at substrate temperature of 200°C.

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