Influence of substrate bias on the structure and properties of TiCN films deposited by radio-frequency magnetron sputtering

2016 ◽  
Vol 616 ◽  
pp. 521-529 ◽  
Author(s):  
N. Saoula ◽  
N. Madaoui ◽  
R. Tadjine ◽  
R.M. Erasmus ◽  
S. Shrivastava ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Substrate Bias ◽  
Structure And Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Influence Of Substrate

Influence of flow ratio of N2 to (N2+Ar) mixture on the structure and properties of zirconium nitride films prepared by radio frequency magnetron sputtering

2009 ◽  
Vol 24 (10) ◽  
pp. 3206-3212 ◽  
Author(s):  
Yingrui Sui ◽  
Jiukai Liu ◽  
Bo Liu ◽  
Lihong Wang ◽  
B. Yao
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Lattice Constant ◽  
Radio Frequency Magnetron ◽  
Zirconium Nitride ◽  
Structure And Properties ◽  
Flow Ratio ◽  
Radio Frequency Magnetron Sputtering ◽  
Pure Nitrogen ◽  
Rocksalt Structure

Zr–N films were grown on glass and Si (100) substrate by radio-frequency magnetron sputtering using a mixture of high pure nitrogen and argon as sputtering gases. The structure and properties of Zr–N compounds in the films change with N2/(N2+Ar) flow ratio (RN2). At low RN2, a ZrN alloy with the rocksalt structure (denoted as γ-ZrNx) is formed. The N concentration x and lattice constant increases with increasing RN2, and x reaches 1 when the RN2 goes up to 20%. As the RN2 exceeds 20%, the film is composed of γ-ZrN and Zr3N4 phase with Th3P4 structure (denoted as c-Zr3N4). The relative content decreases for the γ-ZrN but increases for the c-Zr3N4 with increasing RN2, and a single phase of c-Zr3N4 was deposited on glass at RN2 of 100%. The c-Zr3N4 behaves with p-type conductivity with a band gap of 2.8 eV. The lattice constant of the c-Zr3N4 was measured to be ∼0.674 nm. The mechanism of the phase transition from γ-ZrN to c-Zr3N4 with increasing RN2 was suggested.

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