Defect elimination in solid-phase crystallised Si thin films by line-focus diode laser annealing

2015 ◽  
Vol 576 ◽  
pp. 42-49 ◽  
Author(s):  
Wei Li ◽  
Sergey Varlamov ◽  
Jialiang Huang
Keyword(s):  
Thin Films ◽  
Diode Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Defect Elimination ◽  
Line Focus

scholarly journals Scalable, high power line focus diode laser for crystallizing of silicon thin films

2010 ◽  
Vol 5 ◽  
pp. 109-117 ◽  
Author(s):  
N. Lichtenstein ◽  
R. Baettig ◽  
R. Brunner ◽  
J. Müller ◽  
B. Valk ◽  
...  
Keyword(s):  
Thin Films ◽  
Diode Laser ◽  
High Power ◽  
Power Line ◽  
Silicon Thin Films ◽  
Line Focus

Diode laser annealing on sputtered epitaxial Cu2 ZnSnS4 thin films

2017 ◽  
Vol 11 (5) ◽  
pp. 1700033 ◽  
Author(s):  
Ning Song ◽  
Jialiang Huang ◽  
Martin A. Green ◽  
Xiaojing Hao
Keyword(s):  
Thin Films ◽  
Diode Laser ◽  
Laser Annealing

Rutherford backscattering evidence for solid phase laser annealing of Corning 7059 glass and ZnO thin films

1983 ◽  
Vol 54 (4) ◽  
pp. 2125-2126 ◽  
Author(s):  
Subhadra Dutta ◽  
Howard E. Jackson ◽  
J. T. Boyd ◽  
C. W. White
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Solid Phase ◽  
Rutherford Backscattering ◽  
Zno Thin Films

Solid phase epitaxy of silicon thin films by diode laser irradiation for photovoltaic applications

2012 ◽  
Vol 520 (24) ◽  
pp. 7087-7092 ◽  
Author(s):  
T. Schmidt ◽  
I. Höger ◽  
A. Gawlik ◽  
G. Andrä ◽  
F. Falk
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Diode Laser ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Photovoltaic Applications

scholarly journals Thermal decomposition of tris(O-ethyldithiocarbonato)-antimony(III)—a single-source precursor for antimony sulfide thin films

2021 ◽  
Author(s):  
Jako S. Eensalu ◽  
Kaia Tõnsuaadu ◽  
Jasper Adamson ◽  
Ilona Oja Acik ◽  
Malle Krunks
Keyword(s):  
Thin Films ◽  
Thermal Decomposition ◽  
Mass Loss ◽  
Solid Phase ◽  
Evolved Gas Analysis ◽  
Gas Analysis ◽  
Thermal Decomposition Mechanism ◽  
Product Analysis ◽  
Gaseous Species ◽  
Single Source Precursor

AbstractThermal decomposition of tris(O-ethyldithiocarbonato)-antimony(III) (1), a precursor for Sb2S3 thin films synthesized from an acidified aqueous solution of SbCl3 and KS2COCH2CH3, was monitored by simultaneous thermogravimetry, differential thermal analysis and evolved gas analysis via mass spectroscopy (TG/DTA-EGA-MS) measurements in dynamic Ar, and synthetic air atmospheres. 1 was identified by Fourier transform infrared spectroscopy (FTIR) and nuclear magnetic resonance (NMR) measurements, and quantified by NMR and elemental analysis. Solid intermediates and final decomposition products of 1 prepared in both atmospheres were determined by X-ray diffraction (XRD), Raman spectroscopy, and FTIR. 1 is a complex compound, where Sb is coordinated by three ethyldithiocarbonate ligands via the S atoms. The thermal degradation of 1 in Ar consists of three mass loss steps, and four mass loss steps in synthetic air. The total mass losses are 100% at 800 °C in Ar, and 66.8% at 600 °C in synthetic air, where the final product is Sb2O4. 1 melts at 85 °C, and decomposes at 90–170 °C into mainly Sb2S3, as confirmed by Raman, and an impurity phase consisting mostly of CSO 2 2− ligands. The solid-phase mineralizes fully at ≈240 °C, which permits Sb2S3 to crystallize at around 250 °C in both atmospheres. The gaseous species evolved include CS2, C2H5OH, CO, CO2, COS, H2O, SO2, and minor quantities of C2H5SH, (C2H5)2S, (C2H5)2O, and (S2COCH2CH3)2. The thermal decomposition mechanism of 1 is described with chemical reactions based on EGA-MS and solid intermediate decomposition product analysis.

Sign in / Sign up

Export Citation Format

Share Document