Solid phase epitaxy of silicon thin films by diode laser irradiation for photovoltaic applications

2012 ◽  
Vol 520 (24) ◽  
pp. 7087-7092 ◽  
Author(s):  
T. Schmidt ◽  
I. Höger ◽  
A. Gawlik ◽  
G. Andrä ◽  
F. Falk
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Diode Laser ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Photovoltaic Applications

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

Growth of silicon thin films on erbium silicide by solid phase epitaxy

1994 ◽  
Vol 75 (1) ◽  
pp. 223-226 ◽  
Author(s):  
J.‐Y. Veuillen ◽  
C. d’Anterroches ◽  
T. A. Nguyen Tan
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films

scholarly journals Scalable, high power line focus diode laser for crystallizing of silicon thin films

2010 ◽  
Vol 5 ◽  
pp. 109-117 ◽  
Author(s):  
N. Lichtenstein ◽  
R. Baettig ◽  
R. Brunner ◽  
J. Müller ◽  
B. Valk ◽  
...  
Keyword(s):  
Thin Films ◽  
Diode Laser ◽  
High Power ◽  
Power Line ◽  
Silicon Thin Films ◽  
Line Focus

Solid-Phase Amorphization in Layered Metal/Silicon thin Films

1987 ◽  
Vol 103 ◽  
Author(s):  
Menachem Nathan
Keyword(s):  
Thin Films ◽  
Free Energy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Glassy Phase ◽  
Solid Phase ◽  
General Scheme ◽  
Crystalline Compound ◽  
Nucleation Kinetics ◽  
Silicon Thin Films

ABSTRACTA general scheme for determining which metal-Si systems undergo solidphase amorphization (SPA) upon rapid thermal annealing is presented and used to investigate Ni-Si, Ti-Si, V-Si, Co-Si and Cr-Si reactions. SPA occurs only in the first three systems. With the glaring exception of Co-Si, the results agree with the thermodynamic predictions of SPA in systems in which the free energy of a glassy phase is significantly lower than the free energy of the separate components. The amorphization may also be influenced by the diffusing species and contamination. Following SPA, the first crystalline compound is determined by nucleation kinetics.

Sign in / Sign up

Export Citation Format

Share Document