Correlation of the crystal orientation and electrical properties of silicon thin films on glass crystallized by line focus diode laser

2016 ◽  
Vol 609 ◽  
pp. 12-18 ◽  
Author(s):  
J. Yun ◽  
J. Huang ◽  
A. Teal ◽  
K. Kim ◽  
S. Varlamov ◽  
...  
2010 ◽  
Vol 5 ◽  
pp. 109-117 ◽  
Author(s):  
N. Lichtenstein ◽  
R. Baettig ◽  
R. Brunner ◽  
J. Müller ◽  
B. Valk ◽  
...  

1984 ◽  
Vol 23 (Part 2, No. 10) ◽  
pp. L761-L764
Author(s):  
Z. M. Chen ◽  
Kenji Ebihara ◽  
P. K. John ◽  
B. Y. Tong ◽  
S. K. Wong

2013 ◽  
Vol 582 ◽  
pp. 157-160 ◽  
Author(s):  
Takumi Oshima ◽  
Masaya Nohara ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi

We report the growth of Cu2O thin films on glass and MgO(100) substrates by molecular beam epitaxy. Crystal orientation of Cu2O thin films on glass substrate were changed from (100) to (111) with increasing the deposition rate. The Cu2O thin films were epitaxially grown on MgO(100) substrate with an orientation relationship of Cu2O(110) // MgO(100). The film quality and electrical properties of Cu2O thin films were changed with deposition rate. The slow deposition rate resulted in high conductivity and mobility, as well as good crystallinity and orientation.


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