Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

Jungwoo Oh; Prashant Majhi; Hideok Lee; Oooksang Yoo; Sanjay Banerjee; Chang Yong Kang; Ji-Woon Yang; Rusty Harris; Hsing-Huang Tseng; Raj Jammy

doi:10.1109/led.2007.908502

Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

IEEE Electron Device Letters ◽

10.1109/led.2007.908502 ◽

2007 ◽

Vol 28 (11) ◽

pp. 1044-1046 ◽

Cited By ~ 44

Author(s):

Jungwoo Oh ◽

Prashant Majhi ◽

Hideok Lee ◽

Oooksang Yoo ◽

Sanjay Banerjee ◽

...

Keyword(s):

Layer Thickness ◽

Epitaxial Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Electrical Characteristics ◽

Si Substrates

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Applied Physics Express ◽

10.1143/apex.5.014201 ◽

2011 ◽

Vol 5 (1) ◽

pp. 014201 ◽

Cited By ~ 22

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Thin Body ◽

Semiconductor Interface ◽

Si Substrates

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Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors

Applied Physics Letters ◽

10.1063/1.122943 ◽

1998 ◽

Vol 73 (26) ◽

pp. 3941-3943 ◽

Cited By ~ 53

Author(s):

Nasir Abdul Basit ◽

Hong Koo Kim ◽

Jean Blachere

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Si Substrates

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Photoswitchable organic field-effect transistors and memory elements comprising an interfacial photochromic layer

Chemical Communications ◽

10.1039/c5cc00711a ◽

2015 ◽

Vol 51 (28) ◽

pp. 6130-6132 ◽

Cited By ~ 47

Author(s):

Lyubov A. Frolova ◽

Pavel A. Troshin ◽

Diana K. Susarova ◽

Alexander V. Kulikov ◽

Nataliya A. Sanina ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Memory Devices ◽

Electrical Characteristics ◽

Organic Field Effect Transistors

Memory devices with superior electrical characteristics were designed using an interfacial spirooxazine layer introduced between dielectric and semiconductor layers in OFETs.

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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Effect of ozone exposure on the electrical characteristics of high-purity, large-diameter semiconducting carbon nanotubes

Physical Chemistry Chemical Physics ◽

10.1039/c4cp00665h ◽

2014 ◽

Vol 16 (22) ◽

pp. 10861-10865 ◽

Cited By ~ 6

Author(s):

Jia Gao ◽

Yueh-Lin Loo

Keyword(s):

Carbon Nanotubes ◽

High Purity ◽

Field Effect ◽

Field Effect Transistors ◽

Large Diameter ◽

Ozone Exposure ◽

Electrical Characteristics

Presorted, semiconducting carbon nanotubes in the channels of field-effect transistors undergo simultaneous p-doping and oxidation during ozone exposure.

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The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing

2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013) ◽

10.1109/nano.2013.6720834 ◽

2013 ◽

Author(s):

Hye-Young Kim ◽

Kangho Lee ◽

Jae Woo Lee ◽

Sangwook Kim ◽

Gyu-Tae Kim ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

High Density ◽

Electrical Characteristics

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A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.05dc01 ◽

2009 ◽

Vol 48 (5) ◽

pp. 05DC01 ◽

Cited By ~ 20

Author(s):

Tetsuro Hayashida ◽

Yongxun Liu ◽

Takashi Matsukawa ◽

Kazuhiko Endo ◽

Shinich O'uchi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gas Flow ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Flow Ratio ◽

Nitrogen Gas ◽

Gas Flow Ratio

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Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene)

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/24/11/019 ◽

1991 ◽

Vol 24 (11) ◽

pp. 2032-2038 ◽

Cited By ~ 79

Author(s):

D M Taylor ◽

H L Gomes ◽

A E Underhill ◽

S Edge ◽

P I Clemenson

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characteristics ◽

Electrochemically Deposited ◽

Effect Of Oxygen ◽

Deposited Films

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Steep Switching Characteristics of Partially Gated p+–n+–i–n+ Silicon-Nanowire Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19398 ◽

2021 ◽

Vol 21 (8) ◽

pp. 4330-4335

Author(s):

Jaemin Son ◽

Doohyeok Lim ◽

Sangsig Kim

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Operation Mode ◽

Feedback Loops ◽

Charge Carriers ◽

Electrical Characteristics ◽

Nanowire Transistors ◽

Switching Characteristics

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.

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